Methods and devices for mass spectrometry are described, specifically the use of nanoparticulate implantation as a matrix for secondary ion and more generally secondary particles. A photon beam source or a nanoparticulate beam source can be used a desorption source or a primary ion/primary particle source.

There is provided an apparatus comprising a first ion source (10) arranged and adapted to emit a spray of charged droplets (11), and a control system arranged and adapted to control one or more spatial properties of said spray of charged droplets (11) in use by automatically varying or adjusting one or more parameters of said first ion source.

A method of analysing a sample is disclosed that comprises surveying a sample in a first mode of operation by directing a spray of charged droplets onto the sample, determining one or more regions of interest in the sample, and analysing the one or more regions of interest in a second different mode of operation by directing a spray of charged droplets onto the sample. The spot size of the spray of charged droplets at a point of impact with the sample may be varied.

A secondary ion mass spectrometer comprising a primary ion beam device, and means for collecting, mass filtering and subsequently detecting secondary ions released from a sample due to the sample having been impacted by a plurality of primary ion beams. The secondary ion mass spectrometer is remarkable in that it uses a plurality of primary ion beams in parallel for scanning the surface of the sample.

An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.

An ion analyzer includes: a sample placement unit 2 on which a sample 1 is to be placed; an excitation beam irradiation unit 3 that irradiates the sample 1 placed on the sample placement unit 2 with an excitation beam in a direction perpendicular to a surface of the sample 1; a deflection unit 6 that makes at least some of ions generated from the sample 1 to fly in a direction deviating from an irradiation path of the excitation beam; and an analysis unit 8 disposed in a flight direction of ions deflected by the deflection unit 6, that separates and measures the ions in accordance with a predetermined physical quantity.

The present invention relates to the high resolution imaging of samples using imaging mass spectrometry (IMS) and to the imaging of biological samples by imaging mass cytometry (IMCTM) in which labelling atoms are detected by IMS. LA-ICP-MS (a form of IMS in which the sample is ablated by a laser, the ablated material is then ionised in an inductively coupled plasma before the ions are detected by mass spectrometry) has been used for analysis of various substances, such as mineral analysis of geological samples, analysis of archaeological samples, and imaging of biological substances. However, traditional LA-ICP-MS systems and methods may not provide high resolution. Described herein are methods and systems for high resolution IMS and IMC.

A method and system for measuring an inert gas by an ion probe. Embedding a to-be-measured sample into an epoxy resin, to obtain a sample target, where the to-be-measured sample includes an inert gas atom; after putting the obtained sample target into an analysis chamber of the ion probe, vacuumizing the analysis chamber, where the ion probe includes a primary ion source, an electron gun, a mass analyzer, and an ion detector; bombarding the sample target by using a primary ion beam formed by the primary ion source to release the inert gas atom in the sample target; ionizing the released inert gas atom by using an electron beam formed by the electron gun to form an inert gas ion; and analyzing a secondary ion containing the inert gas ion by using the mass analyzer and the ion detector to achieve measurement of the inert gas.

The disclosure features systems and methods that include: exposing a biological sample to an ion beam that is incident on the sample at a first angle to a plane of the sample by translating a position of the ion beam on the sample in a first direction relative to a projection of a direction of incidence of the ion beam on the sample; after each translation of the ion beam in the first direction, adjusting a focal length of an ion source that generates the ion beam; and measuring and analyzing secondary ions generated from the sample by the ion beam after adjustment of the focal length to determine mass spectral information for the sample, where the sample is labeled with one or more mass tags and the mass spectral information includes populations of the mass tags at locations of the sample.

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).