Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

According to one embodiment, an inspection device includes: a lens barrel that irradiates a substrate having a first main surface on which a pattern is formed with a charged particle; a terminal that comes into contact with the substrate at a first site on a second main surface of the substrate or on a side surface of the substrate and applies a predetermined potential to the substrate; and at least one light source that irradiates a predetermined area of the substrate including the first site with light.

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes an electromagnetic lens configured to refract the charged particle beam; a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam; a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes; a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; and a stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens, wherein the substrate is irradiated with light radiated by the plasma.

A system and method for advanced charge control of a light beam is provided. The system comprising a laser source comprising a laser diode for emitting a beam and a beam homogenizer to homogenize the emitted beam. The system and methods further comprise a beam shaper configured to shape the emitted beam using an anamorphic prism group and a driver configured to direct the shaped beam to a specified position on a wafer, wherein the laser source, the beam shaper, and the driver are coaxially aligned.

The present disclosure provides a semiconductor manufacturing apparatus for processing a semiconductor subject. The semiconductor manufacturing apparatus includes a processing chamber, a first electrode, a second electrode, an RF power supply, and one or more light generators. The first electrode is disposed within the processing chamber. The second electrode is disposed within the processing chamber and substantially beneath the first electrode. The RF power supply is electrically connected to the first electrode. The one or more light generators are disposed within the processing chamber for irradiating the semiconductor subject, thereby releasing charges from the semiconductor subject.

According to one aspect of the present invention, a charged particle beam irradiation apparatus includes an electromagnetic lens configured to refract the charged particle beam; a plurality of electrodes arranged in a magnetic field of the electromagnetic lens and arranged to surround an outer space of a passage region of the charged particle beam; a supply mechanism configured to supply a gas to the space surrounded by the plurality of electrodes; a potential control circuit configured to control potentials of the plurality of electrodes so that a plasma is generated in the space surrounded by the plurality of electrodes and movements of electrons or positive ions generated by the plasma are controlled; and a stage configured to dispose a substrate irradiated with a charged particle beam passing through the electromagnetic lens, wherein the substrate is irradiated with light radiated by the plasma.

A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.

Methods are provided for operating a particle-optical device, wherein electrical charging of a sample to be examined is reduced. The particle-optical device includes a vacuum chamber for receiving a sample, a particle source for generating a primary particle beam directed to the sample, a scan generator for directed guidance of the primary particle beam over the sample surface, and at least one detector for detecting interaction products created during the interaction between the primary particle beam and the sample.