A method for operating a particle beam microscopy system includes recording a first particle-microscopic image at a given first focus and varying the excitations of the first deflection device within a given first range. The method also includes changing the focus to a second focus, and determining a second range of excitations of the first deflection device on the basis of the first range, the first excitation, the second excitation and a machine parameter determined in advance. The method further includes recording a second particle-microscopic image at the second focus and varying the excitations of the first deflection device within the determined second range. The second range of excitations is determined so that a region of the object represented in the second particle-microscopic image was also represented in the first particle-microscopic image.

An apparatus may include a drift tube assembly, the drift tube assembly defining a triple gap configuration, and arranged to accelerate and transmit an ion beam along abeam path. The apparatus may include a resonator, to output an RF signal to the drift tube assembly, and an RF quadrupole triplet, connected to the drift tube assembly, and arranged circumferentially around the beam path.

Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit.

An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port.

The invention provides a power supply device and a charged particle beam device capable of reducing noise generated between a plurality of voltages. The charged particle beam device includes a charged particle gun configured to emit a charged particle beam, a stage on which a sample is to be placed, and a power supply circuit configured to generate a first voltage and a second voltage that determine energy of the charged particle beam and supply the first voltage to the charged particle gun. The power supply circuit includes a first booster circuit configured to generate the first voltage, a second booster circuit configured to generate the second voltage, and a switching control circuit configured to perform switching control of the first booster circuit and the second booster circuit using common switch signals.

In order to improve a yield of light generated by a collision between secondary electrons and gas molecules, the invention provides a charged particle beam device including: a charged particle beam source configured to irradiate a sample with a charged particle beam; a sample chamber configured to hold the sample and a gas molecule; a positive electrode configured to form an electric field that accelerates a secondary electron emitted from the sample; a photodetector configured to detect light generated by a collision between the accelerated secondary electron and the gas molecule; and a light condensing unit disposed between the sample and the photodetector, having a light emitting space in which the light is generated, and configured to condense the light generated in the light emitting space on a photodetector side.

Various embodiments of the present technology generally relate to devices and methods for generating and directing energetic electrons toward a target. More specifically, some embodiments relate to devices, systems, and methods for generating and directing energetic electrons based in the photoelectric effect and directing electric field-focused beams of the energetic electrons toward a target. Electron guns according to the present technology include one or more light sources to stimulate electron transmission, and a series of differentially charged stages to provide a hollow path allowing electrons generated by the photoelectric effect of the light irradiated on interior surfaces defining the path through the stages to travel to an exit of the electron gun. Each of the differentially charged stages have a different potential, thereby providing electrons having two or more different and tunable energy levels exiting as a beam from the electron gun.

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece.