Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

Variable multi-beam charged particle devices for inspection of a sample include a multi-beam source that produces a plurality of charged particle beamlets, an objective lens, a sample holder for holding the sample between the objective lens and the multi-beam source, and a focusing column that directs the plurality of charged particle beamlets so that they are incident upon the sample. The focusing column directs the plurality of charged beams such that there are one or more crossovers of the plurality of charged particle beamlets, where each crossover corresponds to a point where the plurality of charged particle beamlets pass through a common location. The variable multi-beam charged particle devices also include a variable aperture that is configured to vary the current of the plurality of charged particle beamlets, and which is located at a final crossover of the one or more crossovers that is most proximate to the sample.

A scanning electron microscope (SEM) system includes an SEM objective that emits an electron beam toward a sample, causing emission of charged particles including secondary electrons, Auger electrons, backscattered electrons, anions and cations. The SEM system includes electron optics elements that are configured to establish electric fields around the sample that accelerate charged particles toward a detector. A two-dimensional distribution of locations of incidence of the charged particles on the detector is indicative of energies of the charged particles and their emission angles from the sample. A three-dimensional spatial distribution of charged particles emitted from the sample is recovered by performing an Abel transform over the distribution on the detector. The energies and emission angles of the charged particles are then determined from the three-dimensional spatial distribution.

An apparatus may include an ion source, arranged to generate an ion beam at a first ion energy. The apparatus may further include a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy. The apparatus may include a linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy.

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.

A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of: a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and b) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.

A multi-electron beam system that forms hundreds of beamlets can focus the beamlets, reduce Coulomb interaction effects, and improve resolutions of the beamlets. A Wien filter with electrostatic and magnetic deflection fields can separate the secondary electron beams from the 5 primary electron beams and can correct the astigmatism and source energy dispersion blurs for all the beamlets simultaneously.