An ion implantation system has a first linear accelerator for accelerating ions of an ion beam to a first energy along a beam path. A second linear accelerator positioned downstream of the first linear accelerator along the beam path accelerates the ions to a second energy. A charge stripper is positioned between the first and second linear accelerators and is at ground potential. A gas source enclosure selectively encloses a plurality of stripper gas containers in an enclosure environment at ground potential. Each of the plurality of stripper gas containers contains a respective stripper gas. A flow control apparatus can have one or more valves, mass flow controllers, and conduits that selectively fluidly couples each of the plurality of stripper gas containers to the charge stripper and that selectively controls a flow of each respective stripper gas to the charge stripper.

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

An isolation valve for use in an ion implantation system is disclosed. The isolation valve is disposed between the process chamber, which houses the workpiece to be implanted, and the components located immediately upstream from the process chamber. This isolation valve may be closed to allow preventative maintenance to be performed on the process chamber without venting the rest of the ion implantation system. This may reduce particles and other material from traveling upstream from the process chamber during a preventive maintenance operation. This enhancement may reduce the frequency that the rest of the system undergoes preventative maintenance.

The embodiments of the present disclosure provide various techniques for detecting backscatter charged particles, including accelerating charged particle sub-beams along sub-beam paths to a sample, repelling secondary charged particles from detector arrays, and providing devices and detectors which can switch between modes for primarily detecting charged particles and modes for primarily detecting secondary particles.

A method for performing a plasma etch process in a process chamber is provided, including: applying a source radiofrequency (RF) signal to a top electrode of the process chamber; applying a bias RF signal to a lower electrode of the process chamber; wherein the bias RF signal has two or more pulsed duty cycles, including a first duty cycle having a first sinusoidal waveform at a first frequency and pulsed at a first voltage level, and a second duty cycle having a custom waveform pulsed at a second voltage level, the custom waveform consisting of a second sinusoidal waveform at a second frequency that is combined with a non-sinusoidal waveform.

In an axisymmetric electron gun structure, a part of gas molecules flowing from a vacuum chamber having relatively low vacuum reach a photoelectric film, causing problems of deterioration of an NEA surface, instability of an emission current, and a reduction in life of the photoelectric film. An electron microscope including an excitation light source; a photoelectric film formed on a transparent substrate; a condensing lens configured to condense excitation light to the photoelectric film; an anode electrode configured to accelerate an electron beam that is generated when the excitation light is condensed and irradiated to the photoelectric film; a first differential exhaust diaphragm provided close to the photoelectric film and having a passage hole off an axis; a second differential exhaust diaphragm provided close to a sample and having a passage hole on an optical axis; and a deflector for trajectory control of the electron beam.

Embodiments of the present disclosure include systems, methods, algorithms, and non-transitory media storing computer-readable instructions for charged particle imaging and microanalysis. A charged particle beam system can include an objective lens assembly, defining an aperture collocated with a first axis. The system can include a bifurcated acceleration tube. The acceleration tube can include a primary segment, a secondary segment, intersecting the primary segment, the secondary segment being oriented at an angle, a, relative to the first axis, and a common segment, disposed at least partially in the aperture. The system can include a separator. The separator can include one or more charged-particle optical elements disposed in the common segment and configured to apply a deflection force to electrons having a negative velocity in a first direction. The deflection force can redirect the electrons toward a second direction substantially aligned with a second axis.

Provided is a charged particle beam device that can precisely manage a temperature at which a cold field emitter is heated. A charged particle beam device includes: a cold field emitter including a tip having a sharpened distal end, a filament connected to the tip, and an auxiliary electrode covering the filament and having an opening from which the tip protrudes; an extraction electrode to which an extraction voltage for extracting electrons from the cold field emitter is applied; and an acceleration electrode to which an acceleration voltage for accelerating the electrons extracted from the cold field emitter is applied. When the tip and the filament are heated, thermionic electrons emitted from the tip and the filament are collected by the auxiliary electrode to measure a current by applying a positive voltage with respect to the tip to the auxiliary electrode.

A method to operate an ion implanter. The method may include conducting an ion beam into an acceleration stage of a linear accelerator in the ion implanter, where the ion beam is a bunched ion beam. The method may also include applying an RF signal to the acceleration stage while the ion beam passes through the acceleration stage, the RF signal comprising a determined frequency and a determined amplitude, and performing a phase scan using the RF signal. The phase scan may include varying a phase of the RF signal at the acceleration stage over a plurality of phase values; and recording a plurality of arrival times at a monitor, situated downstream of the acceleration stage, the plurality of arrival times corresponding to the plurality of phase values, respectively.

A substrate treating apparatus includes a support configured to support a substrate, a plasma source configured to excite a process gas and generate plasma, a grid assembly disposed to be spaced apart from the support in a first direction perpendicular to a surface of the support, the grid assembly being configured to extract and accelerate ions included in the plasma and generate ion beams, and a reflector disposed to be spaced apart from the grid assembly in the first direction, the reflector having a plurality of reflector holes configured to reflect and convert the ion beams into neutral beams, and a diameter of each of the plurality of reflector holes varies along the first direction.