A system for scanning a plurality of regions of interest of a substrate using one or more charged particle beams, the system comprises: an irradiation module having charged particle optics; a stage for introducing a relative movement between the substrate and the charged particle optics; an imaging module for collecting electrons emanating from the substrate in response to a scanning of the regions of interest by the one or more charged particle beams; and wherein the charged particle optics is arranged to perform countermovements of the charged particle beam during the scanning of the regions of interest thereby countering relative movements introduced between the substrate and the charged particle optics during the scanning of the regions of interest.

The disclosure relates to a low energy electron microscopy. The electron microscopy includes a vacuum chamber; an electron gun used to emit electron beam; a diffraction chamber; an imaging device; a sample holder used to fix two-dimensional nanomaterial sample; a vacuum pumping device; and a control computer. The electron beam transmits the sample to form a transmission electron beam and diffraction electron beam. The control computer includes a switching module to switch the work mode between a large beam spot diffraction imaging mode and small beam spot diffraction imaging mode.

A method of scanning a wafer includes placing the wafer over a substrate holder inside a processing chamber, where the wafer is placed at a first twist angle relative to a reference axis of a rotatable feedthrough of the processing chamber. The method further includes performing a first pass scan by exposing the wafer to an ion beam while driving two rotary drives disposed in a scanning chamber synchronously to generate a planar motion of the wafer from a rotational motion of the two rotary drives, where the wafer is oriented continuously at the first twist angle when performing the first pass scan.

Disclosed herein is a micro stage using a piezoelectric element that can be reliably operated even in a vacuum environment. In a particle column requiring a high precision, for example, a microelectronic column, the micro stage can be used as a stage with micro or nano degree precision for alignment of parts of the column, or for moving a sample, and so on.

A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

Sample stage, e.g. for use in a scanning electron microscope. The sample stage includes a base, a sample carrier, and an actuator assembly arranged for moving the sample carrier in at least one direction substantially parallel to the base. The actuator assembly is arranged so as not to contribute to the mechanical stiffness of the sample stage from the sample carrier to the base.

A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

A driving apparatus is disclosed which has a movable part, a measuring device measuring a position of the movable part, two actuators respectively generating two thrusts which have a common axis of action thereof with respect to the movable part, and a controller that controls the position by the two actuators based on output of the measuring device. The controller obtains information of at least one of a thrust constant of one of the two actuators, a thrust constant of the other of the actuators, and rigidity of a member which supports the movable part with respect to the axis of action, based on a relationship between disturbance force estimated from thrust commands for the two actuators and an output of the measuring device in a case where the one actuator generates a thrust and the other actuator controls the position, and a thrust command for the one actuator.

An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

Drift correction is performed with high accuracy while reducing the calculation amount. According to one aspect of the present invention, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a deflector adjusting an irradiation position of the charged particle beam with respect to a substrate placed on a stage, a shot data generator generating shot data from writing data, the shot data including a shot size, a shot position, and a beam ON⋅OFF time per shot, a drift corrector referring to a plurality of pieces of the shot data for every predetermined area irradiated with the charged particle beam, or for every predetermined number of shots of the charged particle beam irradiated, calculating a drift amount of the irradiation position of the charged particle beam with which the substrate is irradiated, based on the shot size, the shot position and the beam ON⋅OFF time, and generating correction information for correcting an irradiation position displacement based on the drift amount, and a deflection controller controlling a deflection amount achieved by the deflector based on the shot data and the correction information.