Position shifts caused by charging phenomena can be corrected with high accuracy. A charged particle beam writing apparatus includes an exposure-amount distribution calculator calculating an exposure amount distribution of a charged particle beam using a pattern density distribution and a dose distribution, a fogging charged particle amount distribution calculator calculating a plurality of fogging charged particle amount distributions by convoluting each of a plurality of distribution functions for fogging charged particles with the exposure amount distribution, a charge-amount distribution calculator calculating a charge amount distribution due to direct charge using the pattern density distribution, the dose distribution, and the exposure amount distribution, and calculating a plurality of charge amount distributions due to fogging charge using the plurality of fogging charged particle amount distributions, a position shift amount calculator calculating a position shift amount of a writing position based on the charge amount distribution due to direct charge and the plurality of charge amount distributions due to fogging charge, a corrector correcting an exposure position using the position shift amount, and a writer exposing the corrected exposure position to a charged particle beam.

A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

In one embodiment, a multi-beam blanking device includes a semiconductor substrate, an insulating film that is disposed on the semiconductor substrate, an antistatic film that is disposed on the insulating film, a plurality of cells each of which is related to a through-hole that penetrate the semiconductor substrate and the insulating film and each of which includes a blanking electrode and a ground electrode that are disposed on the insulating film, and a ground wiring line that is disposed in the insulating film. The antistatic film and the ground wiring line are connected to each other at a joint that extends through the insulating film on the ground wiring line.

A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.

An actuator has: a motor section; a ball spline having a finite stroke and equipped with a shaft capable of moving along its axis; an external screw thread formed on the shaft; a nut section having an internal screw thread engaging the external screw thread and operating to transmit the rotary force of the motor section to the shaft; and a case housing the motor section and the ball spline. The shaft has a contact section at its front end, the contact section being designed to make contact with the driven object. The contact section is lower than the shaft in thermal conductivity. Due to heat generated by the motor section, the shaft elongates along the axis of the shaft in a first direction, and the case elongates along the axis of the shaft in a second direction opposite to the first direction.

A device (1) for coating a substrate (4) with nanometric sized particles, wherein the device (1) comprises: a plurality of means (2a, 2b, 2c, 2d) called production means, each able to product a jet (3) of nanometric sized particles, each of said production means having a longitudinal axis, the production means being arranged so that the various longitudinal axes are parallel and oriented in a first direction (X) defining the direction of propagation of the jet and in the form of at least two columns (9, 10) offset from each other in a second direction (Y) orthogonal to the first direction (X), where the first (9) and the second column (10) each comprise at least one production means, said at least one production means (2a, 2b, 2c, 2d) of the first column (9) also being offset relative to said at least one production means (2a, 2b, 2c, 2d) of the second column (10) in a third direction (Z) that is both orthogonal to the first direction (X) and to the second direction (Y).

A multi-electron beam imaging apparatus is disclosed herein. An example apparatus at least includes an electron source for producing a precursor electron beam, an aperture plate comprising an array of apertures for producing an array of electron beams from said precursor electron beam, an electron beam column for directing said array of electron beams onto a specimen, where the electron beam column is configured to have a length less than 300 mm, and where the electron beam column comprises a single individual beam crossover plane in which each of said electron beams forms an intermediate image of said electron source, and a single common beam crossover plane in which the electron beams in the array cross each other.

A charged particle beam device, comprising a charged particle source configured to emit a charged particle beam; a movable stage comprising an assembly of aperture arrays having at least a first aperture array and a second aperture array, the movable stage is configured to align the assembly of aperture arrays with the charged particle beam, and at least one aperture array comprises a shielding tube coupled to the movable stage.

In an image collection system using a transmission electron microscope, a useless collection time to be spent collecting images in each of which particles overlap each other or no particle is contained, and a date volume are reduced. The image collection system includes: a control unit that moves an observation field of view in the transmission electron microscope and overlaps each other electron waves that propagate through spatially different portions within the observation field of view; a photographing unit that acquires the overlapped electron waves as an observation image; and a determination unit that determines whether a particle is present within the observation field of view.

An ion implanter includes a beam scanner that performs a scanning with an ion beam in a scanning direction perpendicular to a traveling direction of the ion beam, and a beam profiler that is disposed downstream of the beam scanner and measures a beam current distribution of the ion beam when the scanning by the beam scanner is performed. The beam profiler includes an aperture array that includes a first aperture and a second aperture, a cup electrode array that is disposed to be fixed with respect to the aperture array, the cup electrode array including a first cup electrode and a second cup electrode, and a plurality of magnets.