A beamline device includes a deflection device deflecting an ion beam in a first direction perpendicular to a beam traveling direction by applying at least one of an electric field and a magnetic field to the ion beam. A slit is disposed such that the first direction coincides with a slit width direction. A beam current measurement device is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in the first direction. A control device calculates angle information in the first direction on the ion beam by acquiring a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction by the beam current measurement device while changing a deflection amount of the ion beam in the first direction with the deflection device.

A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W.sub.1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W.sub.2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W.sub.2 is greater than W.sub.1.

An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.

An ion implantation method includes measuring a beam energy of an ion beam that is generated by a high-energy multistage linear acceleration unit operating in accordance with a tentative high-frequency parameter, adjusting a value of the high-frequency parameter based on the measured beam energy, and performing ion implantation by using the ion beam generated by the high-energy multistage linear acceleration unit operating in accordance with the adjusted high-frequency parameter. The tentative high-frequency parameter provides a value different from a value of the high-frequency parameter for achieving a maximum acceleration in design to a high-frequency resonator in a part of stages including at least a most downstream stage. The adjusting includes changing at least one of a voltage amplitude and a phase set for the high-frequency resonator in the part including the at least most downstream stage.

An aberration measurement method for an objective lens in an electron microscope including an objective lens which focuses an electron beam that illuminates a specimen, and a detector which detects an electron beam having passed through the specimen, includes: introducing a coma aberration to the objective lens; measuring an aberration of the objective lens before introducing the coma aberration to the objective lens; measuring an aberration of the objective lens after introducing the coma aberration to the objective lens; and obtaining a position of an optical axis of the objective lens on a detector plane of the detector based on measurement results of the aberration of the objective lens before and after introducing the coma aberration.

This substitution site measuring equipment using an electron beam analyzes, with high precision, the structure of a substitution site in a micrometer- to nanometer-order region, by reducing or vanishing the X-ray intensity of diffraction X-rays generated in a specimen. The substitution site measuring equipment measures a substitution site in a crystal by detecting, by means of an X-ray detector, X-rays generated from a specimen upon irradiation of the specimen with an electron beam. The substitution site measuring equipment is provided with: an input unit to which a crystal structure of a specimen, energy or wavelengths of X-rays to be detected, a tilt angle of the specimen, and positional information about the specimen and the X-ray detector are inputted; a diffraction X-ray incidence calculating means for calculating incidence of diffraction X-rays on the X-ray detector on the basis of parameters inputted to the input unit; a measurement condition setting means for setting a measurement condition according to the incidence of diffraction X-rays on the X-ray detector calculated by the diffraction X-ray incidence calculating means such that the diffraction X-rays are not incident on the X-ray detector; and an electron beam inclination/X-ray detection control unit that detects the X-rays in synchronization with the inclination of an electron beam.

The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.

The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.