A system and method for imaging a sample having a complex structure (such as an integrated circuit). The sample is placed on a motion system that moves the sample with respect to an electron beam generator that is used in imaging the sample. The motion system affords thirteen degrees-of-freedom for movement of the sample, by providing a rotation stage, a fine 6-axis piezoelectric-driven stage, and a coarse 6-axis hexapod stage. Various detectors gather information to image the sample. Interferometric and/or capacitive sensors are used to measure the position of the sample and motion system.

A method of imaging a specimen in a Scanning Transmission Charged Particle Microscope, comprising the following steps: Providing the specimen on a specimen holder; Providing a beam of charged particles that is directed from a source through an illuminator so as to irradiate the specimen; Providing a segmented detector for detecting a flux of charged particles traversing the specimen; Causing said beam to scan across a surface of the specimen, and combining signals from different segments of the detector so as to produce a vector output from the detector at each scan position, said vector output having components Dx, Dy along respective X, Y coordinate axes,
specifically comprising: Performing a relatively coarse pre-scan of the specimen, along a pre-scan trajectory; At selected positions p.sub.i on said pre-scan trajectory, analyzing said components Dx, Dy and also a scalar intensity sensor value Ds; Using said analysis of Dx, Dy and Ds to classify a specimen composition at each position p.sub.i into one of a group of composition classes; For a selected composition class, performing a relatively fine scan at positions p.sub.i assigned to that class.

A processing apparatus and a processing method are provided, which use a charged particle beam device that achieves defection of secondary electrons/reflected electrons at a large angle and cancels out noises of an electromagnetic deflector and an electrostatic deflector to suppress a position shift of a primary electron beam caused by circuit noises of a primary beam/secondary beam separation circuit. In the charged particle beam device that includes an electronic optical system radiating a concentrated electron beam onto a sample placed on a stage to perform scanning and captures an image of the sample, a reference signal and a signal generation unit of a voltage-source control signal applied to the electrostatic deflector generating the electrostatic deflector and a reference signal and a signal generation unit of a current-source control signal applied to the electromagnetic deflector generating a magnetic field are made common in an overlapping-electromagnetic-deflector control unit that controls a path of the secondary electrons/reflected electrons incident on a detector, and frequency characteristics and phase characteristics of the voltage control signal are coincident with those of the current-source control signal.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

Methods, systems, and devices for electron beam probing techniques and related structures are described to enable inline testing of memory device structures. Conductive loops may be formed, some of which may be grounded and others of which may be electrically floating in accordance with a predetermined pattern. The loops may be scanned with an electron beam and image analysis techniques may be used to generate an optical pattern. The generated optical pattern may be compared to an expected optical pattern, which may be based on the predetermined pattern of grounded and floating loops. An electrical defect may be determined based on any difference between the generated optical pattern and the expected optical pattern. For example, if a second loop appears as having a brightness corresponding to a grounded loop, this may indicate that an unintended short exists. Fabrication techniques may be adjusted for subsequent devices to correct identified defects.

A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

A scanning electron microscope includes an FIB column, an SEM column, and a control unit which controls the FIB column and the SEM column. The control unit performs: processing to control the FIB column so that a cross-section of a specimen S is repeatedly exposed at predetermined intervals; processing to perform a first measurement to acquire a first image by irradiating a cross-section of the specimen S with an electron beam each time when a cross-section of the specimen S is exposed; and processing to perform a second measurement to acquire a second image by irradiating a cross-section of the specimen S with an electron beam each time when a cross-section of the specimen S is exposed n times (n is an integer of 2 or more).

A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.

Disclosed herein are example embodiments for performing microscopy using microscope systems that combine both scanning-electron-microscope-cathodoluminescence (SEM-CL) microscopy and focused-ion-beam ion-induced optical emission (FIB-IOE) microscopy. Certain embodiments comprise operating a microscopy system in a first microscopy mode in which an electron beam interacts with a sample at a sample location and causes first-mode photons and electrons to be emitted, the first-mode photons including photons generated through a cathodoluminescence process; and operating a microscopy system in a second microscopy mode in which an ion beam interacts with a sample at the sample location and causes second-mode photons to be emitted, the second-mode photons including photons generated through an ion-induced luminescence process and photons generated through an atomic de-excitation process.

A method for detecting crystal defects includes scanning a first FOV on a first sample using a charged particle beam with a plurality of different tilt angles. BSE emitted from the first sample are detected and a first image of the first FOV is created. A first area within the first image is identified where signals from the BSE are lower than other areas of the first image. A second FOV on a second sample is scanned using approximately the same tilt angles or deflections as those used to scan the first area. The BSE emitted from the second sample are detected and a second image of the second FOV is created. Crystal defects within the second sample are identified by identifying areas within the second image where signals from the BSE are different than other areas of the second image.