A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.

There are provided: a method for image adjustment using a charged particle beam device, and a charged particle beam system, capable of appropriately adjusting a contrast and brightness as well as a focus for a measurement region present in a deep portion of a sample even when a depth of the measurement region is unknown.

A method for image adjustment performed by a computer system controlling a charged particle beam device includes: by the computer system, specifying a measurement region from a captured image of a sample; performing centering processing based on the specified measurement region; extracting the measurement region in a field of view that has undergone the centering processing or the image that has undergone the centering processing; adjusting a contrast and brightness for the extracted measurement region; and adjusting a focus for the measurement region in which the contrast and brightness have been adjusted.

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.

A charged particle beam device capable of easily discriminating the energy of secondary charged particles is realized. The charged particle beam device includes a charged particle source, a sample stage on which a sample is placed, an objective lens that irradiates the sample with a charged particle beam from the charged particle source, a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam, a detector that detects the secondary charged particles deflected by the deflector, a sample voltage control unit that applies a positive voltage to the sample or the sample stage, and a deflection intensity control unit that controls the intensity with which the deflector deflects the secondary charged particles.

A charged particle beam device is provided which minimizes the beam irradiation amount while maintaining a high measurement success rate. The charged particle beam device includes a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m≥1), the number m of frames being smaller than the number n of frames.

A scanning electron microscope objective lens system is disclosed, which includes: a magnetic lens, a deflection device, a deflection control electrode, specimen to be observed, and a detection device; in which, The opening of the pole piece of the magnetic lens faces to the specimen; the deflection device is located in the magnetic lens, which includes at least one sub-deflector; the deflection control electrode is located between the detection device and the specimen, and the deflection control electrode is used to change the direction of the primary electron beam and the signal electrons generating from the specimen; the detection device comprises the first sub-detector for detecting the back-scattered electrons and the second sub-detector for detecting the second electrons. A specimen detection method is also disclosed.

This charged particle beam device is provided with: a plurality of detectors for detecting secondary particles, the detectors being disposed in a symmetrical manner around the optical axis of a primary charged particle beam closer to the charged particle source side than an objective lens; electrodes for forming an electric field oriented in directions corresponding to each of the plurality of detectors, the electrodes being provided on the travel routes of secondary particles from a sample to the detectors; and a control power supply for applying a voltage to the electrodes. Adjusting the voltage applied to each of the electrodes makes it possible to detect, upon deflecting, the secondary particles, and to control the range of azimuths of the secondary particles to be detected.

The purpose of the present invention is to provide a charged particle beam device which adjusts brightness and contrast or adjusts focus and the like appropriately in a short time even if there are few detected signals. Proposed as an aspect for achieving this purpose is a charged particle beam device provided with: a detector for detecting charged particles obtained on the basis of irradiation of a specimen with a charged particle beam emitted from a charged particle source; and a control unit for processing a signal obtained on the basis of the output of the detector, wherein the control unit performs statistical processing on gray level values in a predetermined region of an image generated on the basis of the output of the detector, and executes signal processing for correcting a difference between a statistical value obtained by the statistical processing and reference data relating to the gray level values of the image.

A data analysis system is disclosed for generating analysis data depending on microscopic data of an object generated by a charged particle microscope. The microscopic data includes an image showing a structure. A graphical representation of the structure is displayed on the display by the graphical user interface. Separation data is generated representing at least one path of a separation cut, which separates pixels of the structure from each other. The separation cut is visually marked by the graphical user interface, depending on the separation data, by differently marking different area portions of the representation, which represent different pixels of the structure which are separated from each other by the separation cut. Separate analysis data are generated for each of at least two portions of the object, depending on the microscopic data and depending on the separation data.

A semiconductor device is scanned by an electron beam of a scanning electron microscope (SEM). The area includes a three-dimensional (3D) feature having a top opening and a sidewall. The 3D feature is imaged while varying an energy value of the electron beam. The electron beam impinges at a first point within a selected area of the semiconductor device and interacts with the sidewall, wherein the first point is at a distance away from an edge of the top opening. Based on change in a signal representing secondary electron yield at the edge as the energy value of the electron beam is varied during the SEM imaging, it is determined whether the sidewall is occluded from a line-of-sight of the electron beam. A slope of the sidewall may be determined by comparing measured signals with simulated waveforms corresponding to various slopes.