Apparatuses for collection of wavelength resolved and angular resolved cathodoluminescence (WRARCL) emitted from a sample exposed to an electron beam (e-beam) or other excitation beams are described. Cathodoluminescence light (CL) may be emitted from a sample at specific angles relative to the excitation beam and analyzed with respect to light-emitting and other optical phenomena. The described embodiments allow collection of WRARCL data more efficiently and with significantly fewer aberrations than existing systems.

A method of detecting atomic scale defects in semiconductors, comprising the steps of scanning the surface of the semiconductor with a field emission scanning electron microscope (SEM) to form an SEM image thereof; scanning the SEM image with a light detector and monochromator to obtain a cathodoluminescence (CL) spatial intensity map of the SEM image; determining the CL spectra, i.e. the CL intensity against photon energy for each integral CL intensity; and comparing the CL intensity to a threshold, whereby those semiconductors whose CL intensity is above the threshold are deemed to be defective

An apparatus for inspecting a sample includes a sample holder for holding the sample; a multi beam charged particle generator for generating an array of primary charged particle beams; an electro-magnetic lens system for directing the array of primary charged particle beams into an array of separate focused primary charged particle beams on the sample; a multi-pixel photon detector arranged for detecting photons created by the focused primary charged particle beams when the primary charged particle beams impinge on the sample or after transmission of said primary charged particle beams through the sample; and an optical assembly for conveying photons created by at least two adjacent focused primary charged particle beams of the array of separate focused primary charged particle beams to distinct and/or separate pixels or to distinct and/or separate groups of pixels of the multi-pixel photon detector.

Disclosed herein are example embodiments for performing microscopy using microscope systems that combine both scanning-electron-microscope-cathodoluminescence (SEM-CL) microscopy and focused-ion-beam ion-induced optical emission (FIB-IOE) microscopy. Certain embodiments comprise operating a microscopy system in a first microscopy mode in which an electron beam interacts with a sample at a sample location and causes first-mode photons and electrons to be emitted, the first-mode photons including photons generated through a cathodoluminescence process; and operating a microscopy system in a second microscopy mode in which an ion beam interacts with a sample at the sample location and causes second-mode photons to be emitted, the second-mode photons including photons generated through an ion-induced luminescence process and photons generated through an atomic de-excitation process.

Disclosed is a holder device for an electron microscope, which efficiently collects light emitted when electrons collide with a sample inside the electron microscope and is selectively usable in various electron microscopes since it can be easily attached to and detached from the electron microscopes. The holder device includes a frame; a sample support block configured to be supported on the frame and comprising a sample mounting portion to support an edge of a sample; a mirror unit configured to comprise an upper mirror and a lower mirror respectively arranged above and below the sample and reflect light radiating from the sample, which is mounted to the sample mounting portion and to which an electron beam is emitted, in a predetermined direction; a condensing lens configured to condense light from the mirror unit on a predetermined target; and an optical fiber configured to collect light from the condensing lens.

A vacuum sample chamber for a particle and optical device includes on one surface thereof, an aperture through which a particle beam to be focused along an optical axis of particles such as electrons, ions and neutral particles is incident; and on the opposite surface thereof, a detachable sample holder through which light penetrates, thereby enabling a sample to be observed and analyzed by means of the particle beam and light. A sample chamber is capable of reducing observation time by maintaining a vacuum therein even when a sample is put into or taken out from a sample chamber of an electron microscope or focused ion beam observation equipment, and capable of obtaining an optical image on the outside thereof without inserting a light source or an optical barrel into the sample chamber. A light-electron fusion microscope comprising the sample chamber.

A wafer having ?LEDs is inspected using cathodoluminescence microscopes. A fast scan is enabled by splitting the CL beam into several beams and sensing the beams with point detectors. Optical filters are inserted in the optical path upstream of the detectors, such that each detector senses a different frequency band. The signals are ratioed and the ratios are compared to expected reference. Regions of extreme value are identified and, if desired, a high resolution scan is performed on the regions or a sample of the regions. Viability score is calculated for each identified region.

Atmospheric scanning electron microscope achieves a wide field of view at low magnifications in a broad range of gaseous pressure, acceleration voltage and image resolution. This is based on the use of a reduced size pressure limiting aperture together with a scanning beam pivot point located at the small aperture at the end of electron optics column. A second aperture is located at the principal plane of the objective lens. Double deflection elements scan and rock the beam at a pivot point first at or near the principal plane of the lens while post-lens deflection means scan and rock the beam at a second pivot point at or near aperture at the end of the optics column. The aperture at the first pivot may act also as beam limiting aperture. In the alternative, with no beam limiting aperture at the principal plane, maximum amount of beam rays passes through the lens and with no post-lens deflection means, the beam is formed (limited) by a very small aperture at or near-and-below the final lens while the aperture skims a shifting portion of the wide beam, which is physically rocked with a pivot on the principal plane but with an apparent pivot point close and above the aperture, all of which result in a wide field of view on the examined specimen.

The system described herein detects charged particles which, for example, are generated by interaction of a charged particle beam with an object to be analyzed using, for example, a particle beam device. Detection is carried out for imaging of the object. The system described herein allows detection of charged particles with the same detection principle when the ambient pressures in an object chamber are in a first pressure range being lower than or equal to 10.sup.3 hPa or in a second pressure range being equal to or above 10.sup.3 hPa. When operating with the object chamber in the second pressure range, the system described herein generates photons in a scintillator using cascade particles generated by using the charged particles and a gas, and detects the photons using a light detector.

Atmospheric scanning electron microscope achieves a wide field of view at low magnifications in a broad range of gaseous pressure, acceleration voltage and image resolution. This is based on the use of a reduced size pressure limiting aperture together with a scanning beam pivot point located at the small aperture at the end of electron optics column. A second aperture is located at the principal plane of the objective lens. Double deflection elements scan and rock the beam at a pivot point first at or near the principal plane of the lens while post-lens deflection means scan and rock the beam at a second pivot point at or near aperture at the end of the optics column. The aperture at the first pivot may act also as beam limiting aperture. In the alternative, with no beam limiting aperture at the principal plane, maximum amount of beam rays passes through the lens and with no post-lens deflection means, the beam is formed (limited) by a very small aperture at or near-and-below the final lens while the aperture skims a shifting portion of the wide beam, which is physically rocked with a pivot on the principal plane but with an apparent pivot point close and above the aperture, all of which result in a wide field of view on the examined specimen.