According the present invention there is provided a method for adjusting a component handling assembly, the component handling assembly comprising, a plurality of stations at least some of which have a nest which can receive a component, and a rotatable turret having a plurality of component handling heads, and wherein the turret can rotate to transport components between the plurality of stations, the method comprising the steps of, capturing a first image of a reference element located at a first station, using a camera which is located on the rotatable turret; identifying the position in the first image of the center of the reference element; rotating the turret so that the camera on the turret is in a position where it can capture a second image of nest of a second station; capturing a second image of the nest of the second station, using said camera; identifying the position in the second image of the center of the nest of the second station; superimposing a marker on the second image at the same position as the position of the center of the reference element in the first image; adjusting the second station until the position in the second image of the center of the nest of the second station is aligned with the marker. There is further provided a corresponding component handling assembly.

In one embodiment, a multi charged-particle beam writing apparatus includes a plurality of blankers switching between ON and OFF state of a corresponding beam among multiple beams, a main deflector deflecting beams having been subjected to blanking deflection to a writing position of the beams in accordance with movement of a stage, a detector scanning a mark on the stage with each of the beams having been deflected by the main deflector and detecting a beam position from a change in intensity of reflected charged particles and a position of the stage, and a beam shape calculator switching an ON beam, scanning the mark with the ON beam, and calculating a shape of the multiple beams from a beam position. A shape of a deflection field of the main deflector is corrected by using a polynomial representing an amount of beam position shift that is dependent on a beam deflection position of the main deflector and then the mark is scanned with the ON beam. The polynomial is different for each ON beam.

An electron beam lithography (Ebeam) method for a wafer having alignment and device layers with a design alignment. The Ebeam method includes executing an Ebeam scan of predefined length and resolution based on the design alignment over a pattern edge of the device layer, generating a signal from reflections of the Ebeam scan off the pattern edge, determining an offset of the device layer relative to the alignment layer from a comparison of the signal and the design alignment and applying the offset to the design alignment to obtain an actual measurement of Ebeam alignment.

The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.

A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region.

A further method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) assigning at least one reference marking from a first quantity of first reference markings, which are distributed over the working region and lie within the working region, to at least one partial region from a set of partial regions into which the working region is divided, and (b.) performing the examination and/or processing of the object in the at least one partial region while taking into account the position of the assigned at least one reference marking.

The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam includes: (a.) producing a first group of correction marks; and (b.) producing a second group of correction marks; (c.) wherein the separations of the correction marks within the first and within the second group are smaller than the separations between correction marks from the first group and correction marks from the second group.

According the present invention there is provided a method for adjusting a component handling assembly, the component handling assembly comprising, a plurality of stations at least some of which have a nest which can receive a component, and a rotatable turret having a plurality of component handling heads, and wherein the turret can rotate to transport components between the plurality of stations, the method comprising the steps of, capturing a first image of a reference element located at a first station, using a camera which is located on the rotatable turret; identifying the position in the first image of the centre of the reference element; rotating the turret so that the camera on the turret is in a position where it can capture a second image of nest of a second station; capturing a second image of the nest of the second station, using said camera; identifying the position in the second image of the centre of the nest of the second station; superimposing a marker on the second image at the same position as the position of the centre of the reference element in the first image; adjusting the second station until the position in the second image of the centre of the nest of the second station is aligned with the marker. There is further provided a corresponding component handling assembly.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

A multi-column assembly for a scanning electron microscopy (SEM) system is disclosed. The multi-column assembly includes a plurality of electron-optical columns arranged in an array defined by one or more spacings. Each electron-optical column includes one or more electron-optical elements. The plurality of electron-optical columns is configured to characterize one or more field areas on a surface of a sample secured on a stage. The number of electron-optical columns in the plurality of electron-optical columns equals an integer number of inspection areas in a field area of the one or more field areas. The one or more spacings of the plurality of electron-optical columns correspond to one or more dimensions of the inspection areas.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.