A deposition method is implemented in a focused ion beam system that supplies a compound gas to a specimen, and applies an ion beam to the specimen to deposit a deposition film, the deposition method including: a first deposition film-depositing step that deposits a first deposition film on the specimen using the ion beam that is defocused with respect to the specimen; and a second deposition film-depositing step that deposits a second deposition film on the first deposition film using the ion beam that is smaller in defocus amount than that used in the first deposition film-depositing step.

In one embodiment, A charged particle beam drawing apparatus includes an irradiation amount resetting processing circuitry changing the irradiation amount in the shot data to the irradiation amount lower limit value when the irradiation amount defined in the shot data is less than the irradiation amount lower limit value, a shot size adjustment processing circuitry changing the shot size defined in the shot data, based on an amount of the change in the irradiation amount, a shot position adjustment processing circuitry changing the shot position defined in the shot data, based on an amount of the change in the shot size, and a drawing device drawing a pattern by irradiating the substrate with the charged particle beam, using the shot data in which the irradiation amount, the shot size, and the shot position have been changed.

In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculated based on write data to one or more beams, and adding doses distributed to the beam, and a writing mechanism, including a charged particle beam source, a deflector, and a stage on which a target object is placed, and the writing mechanism deflecting the multiple charged particle beams based on the adjusted deflection coordinates and applying the beams each having the corrected dose to write a pattern.

To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.

An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

According to an embodiment, a charged particle beam apparatus includes a stage; a chamber; an emission source of the charged particle beam; an electronic optical system configured to emit the charged particle beam; an optical column including the emission source and the electronic optical system; a charged particle detector configured to detect a position of the charged particle beam; a first actuator configured to provide a frequency vibration to the stage based on a first excitation signal; a second actuator configured to provide a frequency vibration to the optical column based on a second excitation signal; a third actuator configured to provide a frequency vibration to the chamber based on a third excitation signal; and a controller configured to generate the first to third excitation signals.

A charged particle beam writing method includes acquiring a pair of a reference dose and a backscatter coefficient for proximity effect correction using a first settling time, acquiring a first relation between a temperature rise amount and a critical dimension variation amount using a second settling time shorter than the first settling time, the backscatter coefficient and the reference dose acquired, calculating a temperature correction parameter depending on a temperature rise amount, for correcting a dose, by using the first relation, and a second relation on a dose and a pattern critical dimension in a case of using the first settling time, calculating a beam irradiation dose by the reference dose and a dose coefficient obtained from the backscatter coefficient of the pair acquired, and the temperature correction parameter, and writing a pattern with a beam based on the dose calculated using the second settling time.

Drift correction is performed with high accuracy while reducing the calculation amount. According to one aspect of the present invention, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a deflector adjusting an irradiation position of the charged particle beam with respect to a substrate placed on a stage, a shot data generator generating shot data from writing data, the shot data including a shot size, a shot position, and a beam ON⋅OFF time per shot, a drift corrector referring to a plurality of pieces of the shot data for every predetermined area irradiated with the charged particle beam, or for every predetermined number of shots of the charged particle beam irradiated, calculating a drift amount of the irradiation position of the charged particle beam with which the substrate is irradiated, based on the shot size, the shot position and the beam ON⋅OFF time, and generating correction information for correcting an irradiation position displacement based on the drift amount, and a deflection controller controlling a deflection amount achieved by the deflector based on the shot data and the correction information.

A beam adjustment method includes: installing, on an irradiation surface to which an electron beam is radiated, a detection part having a Faraday cup catching electrical charges of the electron beam, and installing, on a side of an electron gun further than the detection part, a shielding plate having opening holes through which the electron beam is passable. The method includes causing, upon performing beam diameter measurement processing, the electron beam to pass through the opening holes, and radiating the electron beam to the Faraday cup. In addition, the method includes radiating, upon performing normal processing, the electron beam to the shielding plate.

An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.

A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.