A pattern writing method for charged-particle lithography apparatuses using an improved correction for thermal distortion of the substrate includes determining an exposure position where the beam impinges on the substrate and the power of the beam at the exposure position; calculating heating of the substrate at the exposure position, and calculating, for a plurality of locations over the substrate, and the thermal diffusion and radiative cooling; calculating, for the same or a reduced plurality of locations on the substrate, the positional change of the substrate due to thermal expansion; determining a displacement distance which compensates the positional change at the exposure position, updating the structure to be written by shifting the exposure position of the beam by said displacement distance, and writing the updated structures on the substrate with the beam. These steps are repeated as a function of time and/or varying exposure position of the beam substrate position.

In one embodiment, a multi-beam writing method includes acquiring a plurality of pieces of position deviation data corresponding to a plurality of parameter values of a parameter that change position deviation amount of each beam of multi-beam irradiated on a substrate, calculating a plurality of pieces of reference coefficient data corresponding to each of the plurality of pieces of position deviation data, calculating coefficient data corresponding to a parameter value at an irradiation position of the multi-beam on the substrate using the plurality of pieces of reference coefficient data corresponding to the plurality of parameter values, modulating an irradiation amount of each beam of the multi-beam for each shot using the coefficient data, and writing a pattern by irradiating the substrate with each beam of at least a part of the multi-beam having the modulated irradiation amounts.

A charged particle beam optical apparatus has a plurality of irradiation optical systems each of which irradiates an object with a charged particle beam and a first control apparatus configured to control a second irradiation optical system on the basis of an operation state of a first irradiation optical system.

In one embodiment, a charged particle beam writing device writes sequentially patterns to a plurality of deflection positions on a target object by deflecting a charged particle beam by a deflector. The device includes a storage storing relation information indicating a relationship between a time elapsed since a start of deflection by the deflector and an amount of position shift in a shot position to which the charged particle beam is shot, a shot position corrector obtaining a first amount of position shift corresponding to an n-th (where n is an integer greater than or equal to 2) deflection position in sequential pattern writing and a second amount of position shift corresponding to an n−1-th deflection position by using by using a settling time and a shot time of the deflector and the relation information, obtaining an amount of position correction by adding up the first amount of position shift and the second amount of position shift, and correcting a shot position, and a writer emitting the charged particle beam to the n-th deflection position by using the shot data for which the shot position has been corrected, and writing a pattern.

A beam irradiation device that irradiates a plurality of electron beams includes a multibeam optical system that emits the plurality of beams to be irradiated on a target; and a controller that controls an irradiation state of each of the plurality of beams in accordance with change in a relative position between the target and the multibeam optical system, and based on the irradiation state of a first beam of the plurality of beams, controls the irradiation state of a second beam of the plurality of beams.

A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.

Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

Drift correction is performed with high accuracy while reducing the calculation amount. According to one aspect of the present invention, a charged particle beam writing apparatus includes an emitter emitting a charged particle beam, a deflector adjusting an irradiation position of the charged particle beam with respect to a substrate placed on a stage, a shot data generator generating shot data from writing data, the shot data including a shot size, a shot position, and a beam ON⋅OFF time per shot, a drift corrector referring to a plurality of pieces of the shot data for every predetermined area irradiated with the charged particle beam, or for every predetermined number of shots of the charged particle beam irradiated, calculating a drift amount of the irradiation position of the charged particle beam with which the substrate is irradiated, based on the shot size, the shot position and the beam ON⋅OFF time, and generating correction information for correcting an irradiation position displacement based on the drift amount, and a deflection controller controlling a deflection amount achieved by the deflector based on the shot data and the correction information.

A charged particle beam optical apparatus has a plurality of irradiation optical systems each of which irradiates an object with a charged particle beam and a first control apparatus configured to control a second irradiation optical system on the basis of an operation state of a first irradiation optical system.