Systems and methods of observing a sample in a multi-beam apparatus are disclosed. A multi-beam apparatus may comprise an array of deflectors configured to steer individual beamlets of multiple beamlets, each deflector of the array of deflectors having a corresponding driver configured to receive a signal for steering a corresponding individual beamlet. The apparatus may further include a controller having circuitry to acquire profile data of a sample and to control each deflector by providing the signal to the corresponding driver based on the acquired profile data, and a steering circuitry comprising the corresponding driver configured to generate a driving signal, a corresponding compensator configured to receive the driving signal and a set of driving signals from other adjacent drivers associated with adjacent deflectors and to generate a compensation signal to compensate a corresponding deflector based on the driving signal and the set of driving signals.

In a device for observing a semiconductor wafer, a positional relationship between an in-wafer region and a background region in an imaging field of view is not constant when an outer peripheral portion of the wafer is imaged, which results in an increase in the quantity of calculation in defect detection and image classification processing and makes it difficult to efficiently perform defect observation and analysis. There is provided a defect observation system for a semiconductor wafer, and the system includes: a stage on which the semiconductor wafer is placed and which is movable in an XY direction, an imaging unit that is configured to image a portion including an edge of the semiconductor wafer, and an image output unit that is configured to, with respect to a plurality of images obtained by imaging, output images in which edges of the wafer are substantially in parallel among the plurality of images.

This invention can maintain the temperature of the shaping plane in a three-dimensional layer-by-layer shaping apparatus. A three-dimensional layer-by-layer shaping apparatus includes a material spreader that spreads the material or materials of a three-dimensional layer-by-layer shaped object onto the shaping plane on which the three-dimensional layer-by-layer shaped object is to be shaped; an electron gun that generates an electron beam; at least one deflector that deflects the electron beam so that it scans the shaping plane one- or two-dimensionally; at least one lens that is positioned between the electron gun and the deflector, and focuses the electron beam; a focus controller that controls the focus of the electron beam based on which region is to be scanned by the electron beam; and a controller that controls the deflecting direction of the deflector and the scanning rate.

This invention relates to a method and a device for processing a surface of a substrate by means of a particle beam. The method comprises the irradiation of the surface of the substrate, wherein, in a first area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which strikes the surface of the substrate in an unpulsed manner; and wherein, in a second area of the surface of the substrate, the surface of the substrate is processed with the particle beam, which strikes the surface of the substrate in a pulsed manner.

Provided herein are techniques for treating vertical surface features of a semiconductor device with ions. In some embodiments, a method for forming a semiconductor device, may include providing a set of surface features extending from a substrate, the set of surface features including a sidewall. The method may include treating the sidewall with an ion beam disposed at an angle, the angle being a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the substrate. The method may further include rotating the substrate about the perpendicular to the plane while the sidewall is treated with the ion beam to impact an entire height of the sidewall with the ion beam.

Provided is a focused ion beam apparatus that machines a cross section of a specimen by scanning the specimen with an ion beam. The focused ion beam apparatus includes an optical system that scans the specimen with the ion beam, a receiving unit that receives setting of a machining region of the specimen and setting of a plurality of machining conditions for the machining region, and a control unit that controls the optical system. The control unit causes the optical system to scan the machining region with the ion beam, based on the machining conditions that have been set for the machining region.

A system and method for creating a beam current profile that eliminates variations that are not position dependent is disclosed. The system includes two Faraday sensors; one which is moved across the ion beam and a second that remains at or near a certain location. The reference Faraday sensor is used to measure temporal variations in the beam current, while the movable Faraday sensor measures both the position dependent variations and the temporal variations. By combining these measurements, the actual position dependent variations of the scanned ion beam can be determined. This resultant beam current profile can then be used to control the scan speed of the electrostatic or magnetic scanner.

The purpose of the present invention is to provide a charged particle beam device that can specify irradiation conditions for primary charged particles that can obtain a desired charged state without adjusting the acceleration voltage. The charged particle beam device according to the present invention specifies the irradiation conditions for a charged particle beam in which the charged state of a sample is switched between a positive charge and a negative charge, and adjusts the irradiation conditions according to the relationship between the specified irradiation conditions and the irradiation conditions when an observation image of the sample has been acquired (see FIG. 8).

A substrate analysis system includes a load-lock module configured to load or unload a substrate on which a pattern layer is formed; a milling module configured to form a milling surface from which at least a portion of the pattern layer is removed; a depth measuring module configured to measure a milling depth of an analysis region formed on the milling surface; an imaging module configured to capture a two-dimensional image of the analysis region; and a control module controlling the substrate to circulate through the milling module, the depth measuring module, and the imaging module, when the milling depth is shallower than a set target depth, wherein the milling module adjusts a path of the ion beam so that the ion beam moves horizontally in the milling region according to a scanning profile received based on an intensity map of the ion beam.

An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.