A lamella for observation on a transmission electron microscope and other analytical instruments includes multiple thin regions separated by thicker regions or ribs. In some embodiments, the lamella can be wider than 50 μm with more than 10 multiple thin regions, with each thin region may being as thin as 10 nm or even thinner. The process for making such lamellae lends itself to automation. The process is fault tolerant in that not all of the multiple thin regions need to be useable as long as one region provides a useful image. Redeposition is reduced because ion beam imaging is reduced in the automated process and because the ribs reduce redeposition between regions.

Apparatuses and methods for aligning lamella to charged particle beams based on a volume reconstruction are disclosed herein. An example method at least includes forming a reconstructed volume of a portion of a sample, the sample including a plurality of structures, and the reconstructed volume including a portion of the plurality of structures, performing, over a range of angles, a mathematical transform on each plane of a plurality of planes of the reconstructed volume, and based on the mathematical transform on each plane of the plurality of planes, determining a target orientation of the sample within the range of angles, wherein the target orientation aligns the plurality of structures parallel to an optical axis of a charged particle beam.

A method of forming a sample and performing correlative S/TEM and APM analysis is provided wherein a sample containing a region of interest is cut from a bulk of sample material and formed into an ultra-thin lamella. The lamella is then analyzed with an S/TEM to form an image. The lamella sample and mount may then go through a cleaning process to remove any contamination. The lamella containing the ROI is then embedded within a selected material and is formed into a needle-shaped sample. The needle-shaped sample is then analyzed with the APM and the resulting data is merged and correlated with the S/TEM data.

Fiducial coordinates are obtained by aligning template with region of interest extracted from a workpiece image. Image values in the region of interest are projected along a template axis and the project values evaluated to establish a fiducial location which can be used as a reference location for locating workpiece areas for ion beam milling or other processing.

A processing system for forming a cross-section of an object. The processing system comprises a focused ion beam system for forming the cross-section from a pre-prepared surface region of the object and a laser and a light optical system for forming the pre-prepared surface region by laser ablation of a processing region of the object with a first and a second laser beam. The light optical system is configured to direct the first and the second laser beams onto common impingement locations of a common scanning line in the processing region for scanning the first laser beam and for scanning the second laser beam. For each of the impingement locations, an angle between a first incidence direction along an axis of the first laser beam and a second incidence direction along an axis of the second laser beam is greater than 10 degrees, measured in a stationary coordinate system.

An integrated station for extracting specimens suitable for viewing by a transmission electron microscope from a patterned semiconductor wafer, including a wafer cassette holder; a wafer transfer device; a nanomachining device, including a scanning electron microscope and a focused ion beam, a vacuum load lock and an operator control device, and wherein the operator control device notes locations of created lamellae; a plucker device; a control computer, adapted to control the wafer transfer device and the plucker device, commanding the plucker device to remover lamellae at the locations noted by the operator control device; and a user monitor and data input device, communicatively coupled to the computer. The wafer transfer device can transfer wafers from the wafer cassette holder to the vacuum load lock; from the vacuum load lock to the plucker device and from the plucker device to the wafer cassette holder.

Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

An ion milling apparatus has: a sample holder including a shield member for shielding the sample except for a portion to be milled; and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween. The shield member has an edge portion that determines a milling position on or in the sample. The sample locking member is disposed downstream of the edge portion in the direction of irradiation by the ion beam and has a support portion cooperating with the edge portion to support the milled portion therebetween. The support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface. The given angle is equal to or less than 90°.

An apparatus for preparing a sample for microscopy is provided that has a milling device that removes material from a sample in order to thin the sample. An electron beam that is directed onto the sample is present along with a detector that detects when the electron beam has reached a preselected threshold transmitted through or immediately adjacent the sample. Once the detector detects the electron beam has reached this threshold, the milling device terminates the milling process.

Transmission electron microscopes (TEMs) are being utilized more often in failure analysis labs as processing nodes decrease and alternative device structures, such as three dimensional, multi-gate transistors, e.g., FinFETs (Fin Field Effect Transistors), are utilized in IC designs. However, these types of structures may confuse typical TEM sample (or “lamella”) preparation as the resulting lamella may contain multiple potentially faulty structures, making it difficult to identify the actual faulty structure. Passive voltage contrast may be used in a dual beam focused ion beam (FIB) microscope system including a scanning electron microscope (SEM) column by systematically identifying non-faulty structures and milling them from the lamella until the faulty structure is identified.