Patent classifications
H01J2237/31774
EMITTER FOR EMITTING CHARGED PARTICLES
An emitter is configured to emit charged particles. The emitter comprises a body, a metal layer and a charged particle source layer. The body has a point. The metal layer is of a first metal on at least the point. The charged particle source layer is on the metal layer. The point comprises a second metal other than the first metal.
Multi-Beam Pattern Definition Device
The invention relates to a multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, said device being adapted to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming a corresponding number of beamlets, said device comprising an aperture array device in which at least two sets of apertures are realized, an opening array device located downstream of the aperture array device having a plurality of openings configured for the passage of beamlets, said opening array device comprises impact regions, wherein charged impinge upon said impact regions.
Low-blur electrostatic transfer lens for multi-beam electron gun
An electrostatic beam transfer lens for a multi-beam apparatus that includes a series of multiple, successive electrodes, such that an aperture bore of each electrode is aligned along an electron gun axis and is configured to allow multiple beams to pass therethrough. The first electrode in the series is a cylindrical electrode configured to receive the multiple beams at an entrance plane. The first electrode has a bore length and a bore diameter such that a ratio of bore diameter/bore length<0.3. The shape of the first electrode defines the electrostatic field penetration to the entrance plane of the first electrode to prevent lens focusing fields of the electrostatic beam transfer lens from extending through the first electrode and beyond the entrance plane, thus providing a uniform, flat electric field at the entrance area of the electrostatic transfer lens.
METHOD AND SYSTEM FOR DETERMINING A CHARGED PARTICLE BEAM EXPOSURE FOR A LOCAL PATTERN DENSITY
Methods and systems for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose may be calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.
ABERRATION CORRECTION IN CHARGED PARTICLE SYSTEM
A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking 5 part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.
Charged particle beam optical apparatus, exposure apparatus, exposure method, control apparatus, control method, information generation apparatus, information generation method and device manufacturing method
A charged particle beam optical apparatus has a plurality of irradiation optical systems each of which irradiates an object with a charged particle beam and a first control apparatus configured to control a second irradiation optical system on the basis of an operation state of a first irradiation optical system.
Multi-charged particle beam irradiation apparatus and multi-charged particle beam inspection apparatus
A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.
LOW-BLUR ELECTROSTATIC TRANSFER LENS FOR MULTI-BEAM ELECTRON GUN
An electrostatic beam transfer lens for a multi-beam apparatus that includes a series of multiple, successive electrodes, such that an aperture bore of each electrode is aligned along an electron gun axis and is configured to allow multiple beams to pass therethrough. The first electrode in the series is a cylindrical electrode configured to receive the multiple beams at an entrance plane. The first electrode has a bore length and a bore diameter such that a ratio of bore diameter/bore length<0.3. The shape of the first electrode defines the electrostatic field penetration to the entrance plane of the first electrode to prevent lens focusing fields of the electrostatic beam transfer lens from extending through the first electrode and beyond the entrance plane, thus providing a uniform, flat electric field at the entrance area of the electrostatic transfer lens.
MULTI-CHARGED PARTICLE BEAM IRRADIATION APPARATUS AND MULTI-CHARGED PARTICLE BEAM INSPECTION APPARATUS
A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.
METHOD AND SYSTEM FOR DETERMINING A CHARGED PARTICLE BEAM EXPOSURE FOR A LOCAL PATTERN DENSITY
Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.