An apparatus for processing a gas includes: a mounting part installed in a processing container and on which a substrate is mounted; a first gas flow path where a first gas is supplied from a first gas supply mechanism to an upstream portion of the first gas flow path, and a downstream portion of the first gas flow path is branched to form first branch paths; a second gas flow path where a second gas is supplied from a second gas supply mechanism to an upstream portion of the second gas flow path, and a downstream portion of the second gas flow path is branched to form second branch paths; an annular mixing chamber to which a discharge path is connected; and a gas discharge part discharging a mixture gas.

A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.

Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (X=B, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

An arc treatment device includes an arc detector operable to detect whether an arc is present in a plasma chamber, an arc energy determiner operable to determine an arc energy value based on an energy supplied to the plasma chamber while the arc is present in the plasma chamber, and a break time determiner operable to determine a break time based on the determined arc energy value.

Apparatus and method for the plasma treatment of surfaces with a first electrode and a second electrode, the apparatus and method comprises an alternating voltage source between the first and second electrodes, and an electrical field forming, at least between the first and second electrodes, an effective area, which is arranged in front of the first electrode and in which the surface to be treated can be positioned, wherein the second electrode is arranged closer to the effective area than the first electrode. The apparatus and method provides at least one process gas channel for at least one stream of process gas with at least one outlet at the first electrode, wherein the at least one outlet points in the direction of the effective area, the at least one stream of process gas impinges on the electrical field, the electrical field converts the at least one stream of process gas into a stream of plasma, and the stream of plasma impinges on the effective area.

[Problem] To make an in-plane variation of a plasma density uniform.

[Solution] A shower head according to an embodiment of the present technology includes a head body and a shower plate. The head body has an inner space. The shower plate includes a plurality of gas injecting ports communicated with the inner space, a gas injecting surface on which gas is injected from the plurality of gas injecting ports, and a plurality of hole portions disposed on the gas injecting surface. The shower plate is configured in such a manner that surface areas of the plurality of hole portions are radially gradually increased from a center of the gas injecting surface.

Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (XB, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

A plasma generation system includes an impedance matching network calibrated to map desired matching network impedance values to closest available settings of impedance control components. The tuning controller defines a set of target impedance values spaced-apart throughout the tuning range and drives the matching network to generate a set of closest frame tuning values proximate to each target impedance value. The tuning controller computes interpolated tuning values between adjacent pairs of frame tuning values and stores a tuning database that maps available matching network impedance values to specific sets of settings for the impedance control components. After the calibration stage, the tuning controller automatically utilizes the tuning database to map desired matching network impedance values to available settings of the impedance control components on an ongoing basis. Representative embodiments include variable loading and tuning capacitors in series with a fixed or variable phase-shift inductor.

A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.

A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.