A semiconductor wafer includes a silicon carbide wafer and an epitaxial layer, which is disposed at a surface of the silicon carbide wafer and made of silicon carbide. The semiconductor wafer satisfies a condition that a waviness value is equal to or smaller than 1 micrometer. The waviness value is a sum of an absolute value of a value and an absolute value of a value . A highest height among respective heights of a plurality of points with reference to a surface reference plane within a light exposure area is denoted as the value . A lowest height among the respective heights of the points at the epitaxial layer with reference to the surface reference plane within the light exposure area is denoted as the value .

The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The method includes: providing a substrate structure, where the substrate structure includes: a substrate having a first device region and a second device region, a first dummy gate structure at the first device region, a second dummy gate structure at the second device region, and an LDD region below the first dummy gate structure. The first dummy gate structure includes a first dummy gate dielectric layer at the first device region, a first dummy gate on the first dummy gate dielectric layer, and a first spacer layer at a side wall of the first dummy gate. The second dummy gate structure includes a second dummy gate dielectric layer at the second device region, a second dummy gate on the second dummy gate dielectric layer, and a second spacer layer at a side wall of the second dummy gate. The method further includes removing the first dummy gate; etching back the first spacer layer to reduce a thickness of the first spacer layer; removing an exposed portion of the first dummy gate dielectric layer to form a first trench; and removing the second dummy gate and exposed second dummy gate dielectric layer to form a second trench.

A method for manufacturing a semiconductor device is provided. A semiconductor substrate is received. The semiconductor substrate is patterned to form a plurality of protrusions spaced from one another, wherein the protrusion comprises a base section, and a seed section stacked on the base section. A plurality of first insulative structures are formed, covering sidewalls of the base sections and exposing sidewalls of the seed sections. A plurality of spacers are formed, covering the sidewalls of the seed sections. The first insulative structures are partially removed to partially expose the sidewalls of the base sections. The base sections exposed from the first insulative structures are removed. A plurality of second insulative structures are formed under the seed sections.

A method for producing a bonded SOI wafer by bonding a bond wafer and a base wafer, each being formed of a silicon single crystal, together with a silicon oxide film placed therebetween, the method including: preparing, as the base wafer, a silicon single crystal wafer whose resistivity is 100 .Math.cm or more and initial interstitial oxygen concentration is 10 ppma or less; forming, on the front surface of the base wafer, a silicon oxide film by performing, on the base wafer, heat treatment in an oxidizing atmosphere at a temperature of 700 C. or higher and 1000 C. or lower for 5 hours or more; bonding the base wafer and the bond wafer together with the silicon oxide film placed therebetween; and thinning the bonded bond wafer to form an SOI layer.

A stacking structure is applicable to manufacturing a circuit board. The stacking structure includes a transferring layer and a dielectric layer disposed on the transferring layer. The transferring layer includes a substrate and a thin film disposed on the substrate and having a plurality of recess structures thereon. The recess structures are connected as a single piece and bottom portions and top portions of the recess structures are configured to arrange in a staggered manner to form a multi-dimensional arrangement. At least a portion of the dielectric layer being is located in the recess structures, such that the dielectric layer is at least embedded with the recess structures.

A semiconductor substrate processing method includes: a peeling layer forming step of forming a peeling layer by irradiating a first semiconductor substrate with a laser beam having a wavelength capable of passing through the first semiconductor substrate while positioning a focal point of the laser beam within the first semiconductor substrate; a second semiconductor substrate forming step of forming a second semiconductor substrate by epitaxial growth on an upper surface of the first semiconductor substrate after performing the peeling layer forming step; a peeling step of peeling off the first semiconductor substrate from the peeling layer; and a grinding step of grinding and removing the first semiconductor substrate after performing the peeling step.

A silicon carbide substrate according to the present disclosure is a silicon carbide substrate that includes a first main surface and a second main surface opposite to the first main surface, and is made of silicon carbide having a polytype of 4H. The first main surface has a maximum diameter of more than or equal to 140 mm. The first main surface is a {0001} plane or a plane inclined at an off angle of more than 0 and less than or equal to 8 relative to the {0001} plane. Half-widths of a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of the silicon carbide substrate within a plane of the first main surface have an average value of less than 2.5 cm.sup.1, and a standard deviation of less than or equal to 0.06 cm.sup.1.

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ternary carbide is formed on the rear side surface.

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. A barrier layer including least one of silicon carbide, a ternary nitride, and a ternary carbide is formed on the rear side surface.

A method for manufacturing a circuit board includes forming recess structures on a transferring layer; forming a dielectric layer on the transferring layer to form a stacking structure, in which the dielectric layer is at least embedded with the recess structures; bonding the stacking structure a base board by pressing, such that the dielectric layer is in contact with the base board; patterning the dielectric layer, including performing an exposure process on the stacking structure through the transferring layer; and after the exposure process is finished, removing the transferring layer.