A method for making a semiconductor substrate includes: cutting an ingot to obtain a plurality of substrates, each of the substrates including a first surface and a second surface opposite to the first surface; performing a surface treatment on at least one of the first surface and the second surface of each of the substrates using a surface-treating agent; annealing the substrates; and abrasing each of the annealed substrates. A method for making a semiconductor device is also disclosed.

The present disclosure for wafer bonding, including forming an epitaxial layer on a top surface of a first wafer, forming a sacrificial layer over the epitaxial layer, trimming an edge of the first wafer, removing the sacrificial layer, forming an oxide layer over the top surface of the first wafer subsequent to removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer.

A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

A laser processing apparatus includes an irradiation portion, and a controller. The irradiation portion includes a shaping portion configured to shape the laser light. The controller includes: a determination portion configured to determine a first and a second orientation; a processing controller configured to perform a first process of forming the modified region along a first region and stopping formation of the modified region other than the first region, and a second process of forming the modified region along a second region and stopping formation of the modified region other than the second region; and an adjustment portion configured to adjust the orientation of the longitudinal direction to be the first orientation when the first process is performed, and to adjust the orientation of the longitudinal direction to be the second orientation when the second process is performed.

A method of cleaving includes providing a substrate. Optionally, the substrate includes β-gallium oxide, hexagonal zinc sulfide, or magnesium selenide. The substrate includes at least one natural cleave plane and a crystallinity. The substrate is cleaved along a first natural cleave plane of the at least one natural cleave plane. The cleaving the substrate along the first natural cleave plane includes the following. A micro-crack is generated in the substrate while maintaining the crystallinity adjacent to the micro-crack by generating a plurality of phonons in the substrate, the micro-crack comprising a micro-crack direction along the first natural cleave plane. The micro-crack is propagated along the first natural cleave plane while maintaining the crystallinity adjacent to the micro-crack. Optionally, generating a micro-crack in the substrate by generating a plurality of phonons in the substrate includes generating the plurality of phonons by electron-hole recombination. Optionally, the electron-hole recombination includes non-radiative electron-hole recombination.

The present invention provides a monocrystalline SiC substrate with an asymmetric shape for enhancing substrate stiffness against thermal induced deformations, the substrate comprising: a main region, and an asymmetric region located at a peripheral region of the substrate and adjacent to the main region, wherein the asymmetric region is inclined inwards, relative to the main region, to provide an asymmetric shape to the substrate. The present invention also provides a method of producing one or more substrates with an asymmetric shape, comprising: performing a multi-wire sawing process in which one or more substrates are cut with an wire-sawing web from an ingot placed on a stage, and cutting the one or more substrates with the asymmetric shape by controlling a relative movement between the wire-sawing web and the stage, the relative movement causing the wire-sawing web to describe a non-linear sawing path across the ingot to cut the asymmetric shape.

A method for creating at least one cavity in a semiconductor substrate including the steps of: (a) partially ablating the semiconductor substrate from the top side with a laser to form a trench in the semiconductor substrate surrounding a cross section of the semiconductor material having the desired shape, (b) machining the backside of the semiconductor substrate partially ablated in step (a) to reduce the semiconductor substrate to a final thickness that is equal to or less than the laser ablation depth to form a plug of semiconductor material unattached to a remainder of the semiconductor substrate; and (c) removing the plug of semiconductor material from the semiconductor substrate to form the at least one cavity with cross section of desired shape extending through the semiconductor substrate.

A semiconductor device including a semiconductor substrate, a first interlayer insulating layer arranged on the semiconductor substrate, a low dielectric layer arranged on the first interlayer insulating layer, a second interlayer insulating layer and a third interlayer insulating layer sequentially arranged on the low dielectric layer, and a through silicon via penetrating the semiconductor substrate and the first interlayer insulating layer, wherein the semiconductor substrate, the first interlayer insulating layer, and the low dielectric layer constitute a chamfered structure including a first chamfered surface parallel to the top surface of the semiconductor substrate and a second chamfered surface inclined with respect to the top surface of the semiconductor substrate and connected to the first chamfered surface may be provided.

A semiconductor wafer according to an embodiment includes a support region facing a support member, an outer circumferential region positioned on an outer side of the support region, and an inner circumferential region positioned on an inner side of the support region. The outer circumferential region has a convex portion with a thickness protruded upward with respect to the inner circumferential region or a concave portion with a thickness recessed downward with respect to the inner circumferential region.

A processing method of a workpiece with a circular disc shape includes sticking a tape to one surface of the workpiece and integrating the workpiece and a frame through the tape, holding the workpiece by a holding unit with the interposition of the tape, and irradiating the other surface of the workpiece located on the opposite side to the one surface with a pulsed laser beam having such a wavelength as to be absorbed by the workpiece from the side of the other surface. In irradiating the laser beam, the other surface is annularly irradiated with the laser beam in the state in which the orientation of the laser beam is adjusted in such a manner that the laser beam has an angle of incidence formed due to inclination with respect to a normal to the other surface of the workpiece by a predetermined angle.