In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one vapor phase epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a plasma-cleaning chamber coupled to the first or second transfer chamber for removing contaminants from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber.

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

A manufacturing system and a method for forming a clean interface between a functional layer and a 2D layered semiconductor are provided herein. In the steps of the method, the substrate equipped with the 2D layered semiconductor is exposed to a reaction gas, and a stimulus is applied to the reaction gas to generate active particles having higher selectivity toward contaminants on the exposed surface of the 2D layered semiconductor so that the contaminants can be decomposed and removed. Additionally, the contaminants can be removed without damage to the 2D layered semiconductor. A functional layer is in-situ deposited to be in contact with the 2D layered semiconductor. Without the contaminants, a clean interface between the functional layer and the 2D layered semiconductor can be obtained and the 2D layered semiconductor can exhibit better electrical properties.

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

A substrate cleaning method includes injecting a cluster generating gas from a cluster nozzle into a processing chamber, generating gas clusters by adiabatically expanding the cluster generating gas, and removing particles adhered to a target substrate in the processing chamber by irradiating the gas clusters onto the target substrate. The cluster generating gas is selected based on a product of energy K per molecule or atom of the cluster generating gas that is expressed by the following equation (1) and an index C indicating the ease with which the gas forms clusters that is expressed by the following equation (2), K=1/2mv.sup.2=/1k.sub.BT.sub.0 . . . (1) C=(T.sub.b/T.sub.0).sup./1 . . . (2) where k.sub.B: a Boltzmann constant, : a specific heat ratio of the cluster generating gas, m: a mass of the cluster generating gas, v: a speed of the cluster generating gas, T.sub.0: a gas supply temperature, T.sub.b: a boiling point of the cluster generating gas.

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

Implementations of the present disclosure generally relate to an improved substrate support pedestal assembly. In one implementation, the substrate support pedestal assembly includes a shaft. The substrate support pedestal assembly further includes a substrate support pedestal, mechanically coupled to the shaft. The substrate support pedestal comprises substrate support plate coated on a top surface with a ceramic material.