Disclosed is a first cleaning apparatus including a first cleaning bath, a cover provided at the upper part of the first cleaning bath, a drainage portion provided at the lower part of the first cleaning bath, a first cleaning unit and a second cleaning unit provided respectively at a first side surface and a second side surface in the first cleaning bath, and first and second moving units configured to move the first and second cleaning units, respectively, wherein each of the first and second cleaning units includes a plurality of cleaning solution supply pipes provided at different heights and a plurality of nozzles provided at each of the cleaning solution supply pipes, the nozzles provided at one cleaning solution supply pipe have identical cleaning solution spray angles, and the nozzles provided at the other cleaning solution supply pipes have different cleaning solution spray angles.

A substrate cleaning apparatus configured to clean a surface of a substrate having a circular shape by bringing a cleaning member into contact with the surface of the substrate and rotating the substrate and the cleaning member relatively is provided. A contact region of the cleaning member which comes into contact with the surface of the substrate is widened in a radial shape from a center side of the substrate toward a peripheral side thereof.

A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

An object of the present invention is to provide a washing solution for a semiconductor device, the washing solution being excellent in the dissolution suppressing performance with respect to a metal layer containing tungsten and also being excellent in the washing performance of a dry etching residue. Another object of the present invention is to provide a washing method for a semiconductor substrate.

The washing solution for a semiconductor device according to the present invention is a washing solution for a semiconductor device, containing one or more hydroxylamine compounds one selected from the group consisting of hydroxylamine and a hydroxylamine salt, a predetermined component A represented by Formula (1) described later, and water, in which a mass ratio of a content of the hydroxylamine compound to a content of the component A is 5 to 200.

Provided is a Schottky barrier diode which is configured from a Ga.sub.2O.sub.3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga.sub.2O.sub.3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.

Disclosed are a substrate treating apparatus and a substrate treating method. According to an embodiment of the inventive concept, the purge operation of the purge nozzle is performed while the nozzle arm is moved from the first substrate support member to the second substrate support member, it hardly influences the operation of treating the substrate while the nozzle arm is moved from the first substrate support member to the second substrate support member. According to an embodiment of the inventive concept, the substrate treating apparatus may perform an operation of purging the photosensitive liquid nozzle while the treatment liquid supply unit performs a process of supplying the photosensitive liquid to the substrate. Accordingly, because the operation of purging the photosensitive liquid nozzle is performed at the same time when the substrate treating apparatus performs a process, productivity may be improved.

The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a gate layer, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the gate layer, so as to increase an effective abutting area between the gate layer and the active layer, and reduce a width and a length of the thin film transistor, and reduce a parasitic capacitance of the thin film transistor.

Provided is a method for cleaning a semiconductor wafer which can effectively reduce deposits on a main surface of a wafer. A method for cleaning a semiconductor wafer of the present disclosure includes supplying ozone water into a cleaning tank from a lower part of the cleaning tank with the ozone water overflowing from the upper part of the cleaning tank to outside the cleaning tank (first step), subsequently, stopping a supply of the ozone water (second step), subsequently, immersing a semiconductor wafer into the ozone water in the cleaning tank (third step), and subsequently, resupplying the ozone water into the cleaning tank from the lower part of the cleaning tank with the ozone water overflowing again from the upper part of the cleaning tank to outside the cleaning tank (fourth step).

Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

According to one embodiment, a substrate treatment device includes a placement stand configured to rotate a substrate, a cooling part configured to supply a cooling gas into a space between the placement stand and the substrate, a liquid supplier configured to supply a liquid on a surface of the substrate opposite to the placement stand, and a controller controlling a rotation speed of the substrate, a flow rate of the cooling gas, or a supply amount of the liquid. The controller sets the liquid on the surface of the substrate to be in a supercooled state, forms a frozen film by freezing the liquid in the super cooled state, and causes crack to generate in the frozen film by decreasing a temperature of the frozen film.