A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

A substrate processing apparatus includes a stationary cup body 51 provided to surround a substrate holding unit 31 and configured to receive a processing liquid or mist of the processing liquid discharged onto a substrate, the stationary cup body not being moved relatively with respect to a processing vessel; a mist guard 80; and a guard elevating mechanism 84 configured to elevate the mist guard. Here, the mist guard is provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body. Further, the mist guard includes a cylindrical portion 81 of a cylindrical shape and a protruding portion 82 protruded from an upper portion of the cylindrical portion toward an inside of the cylindrical portion.

A substrate processing apparatus includes a driving magnet that is disposed correspondingly to a movable pin and that has a predetermined polar direction with respect to a radial direction of a rotary table, a pressing magnet that has a magnetic pole that gives an attractive magnetic force or a repulsive magnetic force between the driving magnet and the pressing magnet and that presses a support portion against a peripheral edge of a substrate by urging the support portion toward a contact position by means of the attractive magnetic force or the repulsive magnetic force, and a pressing-force changing unit that changes a magnitude of a pressing force against the peripheral edge of the substrate pressed by the support portion while keeping the magnitude higher than zero in response to rotation of the rotary table.

A substrate processing apparatus includes a rotation holding device that holds and rotates a substrate, a liquid supply device including one or more rinse liquid nozzles that are positioned on back surface side of the substrate and supply rinse liquid to peripheral edge portion of back surface of the substrate, a cup that receives the liquid supplied to the substrate, and a control device including circuitry that controls the holding and supply devices. The nozzle is attached to the cup to receive the liquid, and the circuitry controls the holding and supply devices and executes first process in which the holding device varies rotation speed between first and second speeds, and the nozzle supplies the liquid to the peripheral edge portion of the back surface of the substrate such that the liquid cleans peripheral region of the nozzle in the cup and region on outer side of the peripheral region.

A substrate cleaning method includes a processing liquid supplying step which supplies a processing liquid that contains a solute and a volatile solvent to an upper surface of a substrate, a film forming step in which the solvent is at least partially volatilized from the processing liquid and solidified or hardened to form a particle holding layer on the upper surface of the substrate, and a removal step in which a peeling liquid is supplied to the upper surface of the substrate to peel and remove the particle holding layer. A solute composition in the solute is insoluble in the peeling liquid before being heated to a temperature equal/higher than a quality-changing temperature to become soluble in the peeling liquid. During film forming, the processing liquid is heated to a temperature below the quality-changing temperature, to form the particle holding layer, without changing the quality of the solute composition. A residue removal step that removes a residue removing liquid which dissolves before being heated to a temperature equal/higher than the quality-changing temperature is supplied to the upper surface of the substrate, to remove residues that remain.

An apparatus for performing liquid treatment for a substrate is provided. The apparatus for performing the liquid treatment for the substrate may include a housing having a treatment space, a substrate support unit to support and rotate the substrate in the treatment space, a liquid feeding unit including a nozzle device including a central exhaust port and multiple first outer exhaust ports, which are provided in a shape of a ring to form a concentric circle with the central exhaust port to feed mutually different treating liquids onto the substrate through respective exhaust ports, and a controller to control the liquid feeding unit.

Disclosed is a method for performing a liquid processing on a substrate using an aqueous solution of a chemical agent at a predetermined concentration as a processing liquid. The method includes: storing the processing liquid in a processing liquid storage unit; and supplying an aqueous solution of the chemical agent at a different concentration from the concentration of the processing liquid to the processing liquid storage unit, discharging the processing liquid from the processing liquid storage unit so as to update the processing liquid stored in the processing liquid storage unit. The aqueous solution in a predetermined amount is supplied to the processing liquid storage unit, and the processing liquid is discharged from the processing liquid storage unit, the processing liquid containing the chemical agent in the same amount as the amount of the chemical agent contained in the aqueous solution supplied to the processing liquid storage unit.

A fluid supply device and a fluid supply method capable of stably supplying a supercritical fluid includes a fluid supply device for supplying a fluid in a liquid state before being changed to a supercritical fluid toward a processing chamber. The fluid supply device comprises a condenser that condenses and liquefies carbon dioxide in a gas state, a tank that stores the fluid condensed and liquefied by the condenser, a pump that pressure-feeds the liquefied carbon dioxide stored in the tank toward the processing chamber, and a damper part that is provided to a flow path communicating with a discharge side of the pump and suppresses periodic pressure fluctuations of the liquid discharged from the pump. The damper part includes a spiral tube formed into a spiral shape that is fixed at both end portions in predetermined positions, and allows the liquid discharged from the pump to flow therethrough.

A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface. The method provided involves smoothing a semiconductor substrate surface by making use of stress enhanced surface diffusion at elevated temperatures. The purpose of this method is to reach atomic scale surface smoothness (for example, smoothness in the range of between 1.0 and 1.5 angstroms as measured according to root mean square over a 30 um×30 um AFM measurement), which is required in advanced (sub 28 nm) CMOS device fabrication.

The present invention provides a high temperature chemical solution supply system for cleaning substrates. The system includes a solution tank, a buffer tank, a first pump and a second pump. The solution tank contains high temperature chemical solution. The buffer tank has a tank body, a vent line and a needle valve. The tank body contains the high temperature chemical solution. An end of the vent line connects to the tank body, and the other end of the vent line connects to the solution tank. The needle valve is mounted on the vent line, wherein the needle valve is adjusted to reach a flow rate to vent gas bubbles inside of the high temperature chemical solution out of the buffer tank through the vent line. An inlet of the first pump connects to the solution tank, and an outlet of the first pump connects to the buffer tank. An inlet of the second pump connects to the buffer tank, and an outlet of the second pump connects to a cleaning chamber in which a substrate is cleaned. The present invention also provides an apparatus including the high temperature chemical solution supply system and an ultra or mega sonic device for cleaning the substrate. The present invention also provides methods for cleaning the substrates.