An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SCl solution, DI water and O.sub.3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H.sub.2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.

A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.

There is provided a drying apparatus for covering an upper surface of the substrate with an uneven pattern formed thereon with a liquid film and subsequently drying the substrate, including: a first heat transfer part whose temperature is adjusted to a first temperature, wherein a first heat is transferred between the first heat transfer part and the substrate by a first temperature difference; a second heat transfer part whose temperature is adjusted to a second temperature different from the first temperature, wherein a second heat is transferred between the second heat transfer part and the substrate by a second temperature difference; and a controller configured to control the first temperature and the second temperature and to control a surface tension distribution of the liquid film so as to control an agglomeration of the liquid film.

The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench; depositing a first metal oxide layer over the interfacial layer; removing the first metal oxide layer from the pFET structure; depositing a ferroelectric layer in each gate trench; depositing a second metal oxide layer over the ferroelectric layer; removing the second metal oxide layer from the nFET structure; and depositing a gate electrode in each gate trench.

An integrated circuit device includes: a substrate including active regions; a device isolation film defining the active regions; a word line arranged over the active regions and the device isolation film and extending in a first horizontal direction; and a gate dielectric film arranged between the substrate and the word line and between the device isolation film and the word line, in which, in a second horizontal direction orthogonal to the first horizontal direction, a width of a second portion of the word line over the device isolation film is greater than a width of a first portion of the word line over the active regions. To manufacture the integrated circuit device, an impurity region is formed in the substrate and the device isolation film by implanting dopant ions into the substrate and the device isolation film, and a thickness of a portion of the impurity region is reduced.

The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes: providing a substrate that includes an array region and an edge region; forming a composite layer on the substrate, where the composite layer includes an amorphous silicon layer and a silicon dioxide layer, and the silicon dioxide layer is located on a surface of the amorphous silicon layer away from the substrate; dry etching the silicon dioxide layer in the array region by using first plasma, to expose a part of the surface of the amorphous silicon layer in the array region; performing, by using second plasma, a plasma surface treatment on an exposed part of the surface of the amorphous silicon layer; cleaning an amorphous silicon layer on which the plasma surface treatment has been performed and a dry etched silicon dioxide layer; and coating a first photoresist layer on the composite layer in the edge region and the array region of the substrate, and performing exposing and developing.