An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.

It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 μg/m.sup.3 and less.

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of a hafnium-containing material. The methods may also include removing the hafnium-containing material.

A method for forming a semiconductor device. A substrate having a first region and a second region surrounding the first region is provided. The first region includes a first active area and a first gate. A dummy pattern is disposed on the substrate within the second region around a perimeter of the first region. A resist pattern masks the second region and includes an opening that exposes the first region. An ion implantation process is performed to implant dopants through the opening into the first active area not covered by the first gate within the first region, thereby forming doped regions in the first active area. A resist stripping process is performed to remove the resist pattern by using a sulfuric acid-hydrogen peroxide mixture (SPM) solution at a temperature that is higher than or equal to 120˜190 degrees Celsius. The substrate is subjected to a cleaning process.

There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

According to one embodiment, there is provided a chemical liquid supply system including a chemical liquid supply apparatus and a monitoring apparatus. The chemical liquid supply apparatus includes a nozzle, a filter, a first pressure gauge, and a second pressure gauge. The first and the second pressure gauge are disposed on the pipeline, respectively at a chemical liquid supply-source side and chemical liquid delivery side of the filter. The monitoring apparatus is configured to determine a state of the filter based on first differential pressure time information in which a differential pressure is acquired in a period until a time point of a lapse of a predetermined time since a start of pneumatic feeding of the chemical liquid to the nozzle. The differential pressure is a difference between a first pressure value measured by the first pressure gauge and a second pressure value measured by the second pressure gauge.

Provided is a method for treating a substrate which removes particle within a concave portion on a substrate having a thin film on which a pattern having the concave portion on its upper surface is formed. The substrate treating method according the present invention comprises a penetration step for penetrating a treatment liquid containing supercritical organic chemical solution into the concave portion; and a heating step for heating the substrate after the penetration step.

A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.