The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. A method for fabricating the semiconductor device may include forming a plurality of spacers, performing a first etching process to form a plurality of trenches, removing the plurality of spacers, performing a second etching process to form a shaped cavity, and filing the shaped cavity with silicon and germanium material.

The present invention makes it possible to improve the reliability of a semiconductor device. In a manufacturing method of a semiconductor device according to an embodiment, when a resist pattern is formed over a cap insulating film comprising a silicon nitride film, the resist pattern is formed through the processes of coating, exposure, and development treatment of a chemical amplification type resist. Then the chemical amplification type resist is applied so as to directly touch the surface of the cap insulating film comprising the silicon nitride film and organic acid pretreatment is applied to the surface of the cap insulating film comprising the silicon nitride film before the coating of the chemical amplification type resist.

Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500° C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened.

According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and a low-dielectric constant interlayer dielectric film. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water.

A method for removing polymer is provided. An aqueous solution is applied to a semiconductor workpiece with polymer arranged thereon. The aqueous solution comprises an energy receiver configured to generate reactive radicals in response to energy. Energy is applied to the aqueous solution to generate the reactive radicals in the aqueous solution and to remove the polymer. A process tool for generating the reactive radicals is also provided.

According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.

The present description concerns a method of manufacturing a semiconductor component (170), including the successive steps of: providing a stack including a first semiconductor layer (105) made of a III-N compound and a second conductive layer (107) coating the first layer; forming a trench (110) crossing the second layer (107) and stopping on the first layer (105), said trench laterally delimiting a contact metallization in the second layer (107); forming in said trench (110) a metal spacer (111) made of a material different from that of the second layer (107), in contact with the sides of the contact metallization; and continuing said trench (110) through at least a portion of the thickness of the first layer (105).

A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first insulator; a transistor over the first insulator; a second insulator over the transistor; a first conductor embedded in an opening in the second insulator; a barrier layer over the first conductor; a third insulator over the second insulator and over the barrier layer; and a second conductor over the third insulator. The first insulator, the third insulator, and the barrier layer have a barrier property against oxygen and hydrogen. The second insulator includes an excess-oxygen region. The transistor includes an oxide semiconductor. The barrier layer, the third insulator, and the second conductor function as a capacitor.

An apparatus for cleaning a wafer includes a wafer station configured to hold the wafer, and a first and a second dispensing system. The first dispensing system includes a first swivel arm, and a first nozzle on the first swivel arm, wherein the first swivel arm is configured to move the first nozzle over and aside of the wafer. The first dispensing system includes first storage tank connected to the first nozzle, with the first nozzle configured to dispense a solution in the first storage tank. The second dispensing system includes a second swivel arm, and a second nozzle on the second swivel arm, wherein the second swivel arm is configured to move the second nozzle over and aside of the wafer. The second dispensing system includes a second storage tank connected to the second nozzle, with the second nozzle configured to dispense a solution in the second storage tank.

The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.