A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

A cleaning method includes (A) and (B) described below. (A) A first processing liquid is supplied to a central portion of a top surface of a substrate from a first nozzle and, also, a second processing liquid is supplied to a periphery of the top surface of the substrate from a second nozzle in a state that the substrate is horizontally held inside a cup and the substrate is rotated in a first direction about a vertical rotation shaft. (B) During a discharge of the second processing liquid by the second nozzle, the second nozzle is moved in a diametrical direction of the substrate between a first position where a discharge line of the second nozzle touches the periphery of the top surface of the substrate and a second position where the discharge line of the second nozzle deviates from the substrate.

A metal resist remover containing a solvent and a sulfuric acid, in which a pH value, which is measured with a pH meter, of a liquid formed by subjecting the cleaning liquid to a 10-fold dilution with pure water is 2.5 or less.

A method for cleaning an edge of a semiconductor wafer in a wafer edge exposure (WEE) apparatus includes positioning the semiconductor wafer having a resist thereon in a wafer positioning device. A brush bar is positioned adjacent a backside of the semiconductor wafer in the wafer positioning device. The brush bar engages and cleans a backside of the semiconductor wafer while the semiconductor wafer is disposed in the wafer positioning device. A height of an edge of the semiconductor wafer is detected. The focusing position of exposure light radiated toward the edge is controlled on the basis of a height of the edge. Exposure light is radiated towards an edge after the cleaning step.

A non-transitory medium includes instructions to control a spin coating device to render a cleaning nozzle of the spin coating device below a base plate and out of optimal exposure to a substrate material placed on a spin chuck when the base plate is engaged with the spin chuck. In response to disengagement of a lid from the base plate, the non-transitory medium also includes instructions to disengage the base plate from the spin chuck to lower the base plate to a locking point whereupon a portion of the cleaning nozzle below the base plate passes through a hole in the base plate and emerges completely out of and above the base plate, and instructions to clean the bottom surface and/or the edges of the substrate material utilizing the cleaning nozzle based on an optimal exposure to the bottom surface and the edges of the substrate material.

A cleaning solution includes a solvent having Hansen solubility parameters: 25>δ.sub.d>13, 25>δ.sub.p>3, 30>δ.sub.h>4; an acid having an acid dissociation constant pKa: −11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from

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R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O.sub.2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO.sub.2OH, —SO.sub.2SH, —SOH, —SO.sub.2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO.sub.3NH—, and SO.sub.2NH.

A substrate cleaning roll that has a cylindrical shape and scrubs a surface of a substrate by rotating about a rotational axis in a longitudinal direction in contact with the substrate, the longitudinal direction being parallel to the surface of the substrate, the substrate cleaning roll including a bevel cleaner at least at one end of the substrate cleaning roll in the longitudinal direction, the bevel cleaner including a sloping surface to be in contact with an outermost edge of a bevel portion at a rim of the substrate when the substrate cleaning roll comes into contact with the substrate and cleans the surface of the substrate.

A lower plasma-exclusion-zone ring for a bevel etcher is provided that is configured to etch a bevel edge of a substrate. The lower plasma-exclusion-zone ring includes a ring-shaped body and a radially-outer stepped surface. The ring-shaped body of the lower plasma-exclusion-zone ring defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The radially-outer stepped surface of the lower plasma-exclusion-zone ring extending inwardly into the ring-shaped body between the radially outer surface of the ring-shaped body and the upper surface of the ring-shaped body. The ring-shaped body is made of a material selected from a group consisting of aluminum oxide, aluminum nitride, silicon, silicon carbide, silicon nitride, and yttria.

A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate. The substrate has an edge region and a center region. The method also includes forming a dielectric ring in the edge region, forming a metal layer over the center region of the substrate and over the dielectric ring in the edge region of the substrate and polishing the metal layer in the center region and the edge region to expose the dielectric ring in the edge region of the substrate.

A substrate processing apparatus which reliably prevents a cleaning liquid containing foreign particles from falling from a polishing head onto a substrate is disclosed. The substrate processing apparatus includes a rotating and holding mechanism, a polishing head, and a head cleaning device configured to supply the cleaning liquid to the polishing head to clean the polishing head during polishing and/or after polishing of the substrate.