The present application relates to semiconductor integrated circuit manufacturing equipment, in particular to a cleaning fluid guide device for wet cleaning equipment, wherein a positive voltage end and a negative voltage end are provided on both ends of a nozzle to apply an electric field to a cleaning fluid sprayed by the nozzle, and the electric field guides the cleaning fluid to form an included angle θ between the cleaning fluid and a wafer backside, such that spraying of the cleaning fluid does not always start from the center of the wafer backside, avoiding the problem that the center of the wafer backside is relatively thin while the edge thereof is relatively thick after a plurality of repeated wet cleaning processes, and thereby improving the yield of semiconductor devices.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid containing (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A composition contains a periodic acid compound selected from the group consisting of a periodic acid and a salt thereof, an amine compound that is a specific compound represented by Formula (1) or a salt thereof, and water.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A substrate warehouse stores a container housing a substrate, and includes a transfer-in part which allows the container to be mounted thereon when the container is transferred-in from an outside; a transfer-out part which allows the container to be mounted thereon when the container is transferred-out to the outside; and a standby part which allows the container standing by for transfer-out to the outside to be mounted thereon. Also included is a functional part including an inspection that performs processing of inspecting the substrate; a delivery part which allows the container to be mounted thereon when delivering the substrate between the functional part and the container; a container transfer mechanism which transfers the container in the substrate warehouse; and a substrate transfer mechanism which transfers the substrate between the functional part and the container mounted on the delivery part.

In accordance with some embodiments, a wafer processing method is provided. The wafer processing method includes placing a semiconductor wafer on a wafer stage with a backside surface of the semiconductor wafer facing downwardly. The wafer processing method further includes positioning a first brush assembly below the backside surface of the semiconductor wafer. The wafer processing method also includes moving a first brush assembly toward the backside surface of the semiconductor wafer to a first position. At the first position, an inner brush member and an outer brush member of the first brush assembly, made of different materials, are in contact with the backside surface of the semiconductor wafer. In addition, the wafer processing method includes rotating the first brush assembly relative to the semiconductor wafer while the first brush assembly is in the first position.

A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base. A switching mechanism switches between a first holding condition state where the first abutting members hold the substrate and a second holding condition state where the second abutting members hold the substrate; wherein, in the second holding condition state, the first abutting members are spaced from the substrate, and in the first holding condition state, an upper surface of the substrate is in a position above an upper end surface of each of the first and second abutting members are spaced from the substrate.

The present application relates to semiconductor integrated circuit manufacturing equipment, in particular to a cleaning fluid guide device for wet cleaning equipment, wherein a positive voltage end and a negative voltage end are provided on both ends of a nozzle to apply an electric field to a cleaning fluid sprayed by the nozzle, and the electric field guides the cleaning fluid to form an included angle θ between the cleaning fluid and a wafer backside, such that spraying of the cleaning fluid does not always start from the center of the wafer backside, avoiding the problem that the center of the wafer backside is relatively thin while the edge thereof is relatively thick after a plurality of repeated wet cleaning processes, and thereby improving the yield of semiconductor devices.

A vertical IGBT device is disclosed. The vertical IGBT structure includes an active MOSFET cell array formed in an active region at a front side of a semiconductor substrate of a first conductivity type. One or more column structures of a second conductivity type concentrically surround the active MOSFET cell array. Each column structure includes a column trench and a deep column region. The deep column region is formed by implanting implants of the second conductivity type into the semiconductor substrate through the floor of the column trench. Dielectric side wall spacers are formed on the trench side walls except a bottom wall of the trench and the column trench is filled with poly silicon of the second conductivity type. One or more column structures are substantially deeper than the active MOSFET cell array.

An apparatus and a method which can perform different processes, such as polishing and cleaning, on a surface of a substrate, such as a wafer, with a single processing head, and can process the surface of the substrate efficiently are disclosed. The apparatus includes: a substrate holder configured to hold a substrate and rotate the substrate; and a processing head configured to bring scrubbing tapes into contact with a first surface of the substrate to process the first surface. The processing head includes: pressing members arranged to press the scrubbing tapes against the first surface of the substrate; position switching devices configured to be able to switch positions of the pressing members between processing positions and retreat positions; tape feeding reels configured to feed the scrubbing tapes, respectively; and tape take-up reels configured to take up the scrubbing tapes, respectively.