The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate. The method for treating a substrate according to an embodiment of the present invention includes a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid, for the substrate having the transition metal-containing substance, and a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of a solution including hydrogen peroxide and an acidic aqueous solution which is other than hydrofluoric acid, nitric acid, an aqueous perchloric acid solution, an aqueous oxalic acid solution, and a mixed aqueous solution of these and does not include hydrogen peroxide after the step A.

The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate.

The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.

A polishing apparatus which can efficiently polish an entirety of a back surface of a substrate, with the back surface facing downward, is disclosed. The polishing apparatus includes: a substrate holder configured to rotate the substrate; a polishing head configured to polish the back surface of the substrate; a tape advancing device; and a translational rotating mechanism configured to cause the polishing head to make a translational rotating motion. The substrate holder includes a plurality of rollers which are rotatable about their own axes. The plurality of rollers have substrate-holding surfaces capable of contacting a periphery of the substrate. The polishing head is disposed below the substrate-holding surfaces. The polishing head includes a polishing blade configured to press the polishing tape against the back surface of the substrate, and a pressing mechanism configured to push the polishing blade upward.

Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate.

A method of fabricating a semiconductor device includes forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate.

A cleaning solution includes first solvent having Hansen solubility parameters 25>.sub.d>13, 25>.sub.p>3, and 30>.sub.h>4; acid having acid dissociation constant, pKa, of 11<pKa<4, or base having pKa of 40>pKa>9.5; and surfactant. Surfactant is one or more of ionic surfactant, polyethylene oxide and polypropylene oxide, non-ionic surfactant, and combinations. Ionic surfactant is selected from group consisting of

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R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and X includes polar functional groups selected from OH, O, S P, P(O.sub.2), C(O)SH, C(O)OH, C(O)OR, O; N, C(O)NH, SO.sub.2OH, SO.sub.2SH, SOH, SO.sub.2, CO, CN, SO, CON, NH, SO.sub.3NH, SO.sub.2NH.

It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.

A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base. A switching mechanism switches between a first holding condition state where the first abutting members hold the substrate and a second holding condition state where the second abutting members hold the substrate; wherein, in the second holding condition state, the first abutting members are spaced from the substrate, and in the first holding condition state, an upper surface of the substrate is in a position above an upper end surface of each of the first and second abutting members are spaced from the substrate.

A method includes rendering a cleaning nozzle of a spin coating device below a base plate and out of optimal exposure to a bottom surface and edges of a substrate material placed on a spin chuck in a state of engagement of the base plate with the spin chuck, and rendering the base plate completely under the spin chuck even in the aforementioned state of engagement. In response to disengagement of a lid from the base plate, the method also includes disengaging the base plate from the spin chuck to lower the base plate to a locking point whereupon a portion of the cleaning nozzle below the base plate passes through a hole in the base plate and emerges completely out of and above the base plate, and cleaning the bottom surface and/or the edges of the substrate material utilizing the cleaning nozzle based on an optimal exposure thereof.

A non-transitory medium includes instructions to control a spin coating device including instructions to render a cleaning nozzle of the spin coating device below a base plate and out of optimal exposure to a bottom surface and edges of a substrate material placed on a spin chuck in a state of engagement of the base plate with the spin chuck. In response to disengagement of a lid from the base plate, the non-transitory medium also includes instructions to disengage the base plate from the spin chuck to lower the base plate to a locking point whereupon a portion of the cleaning nozzle below the base plate passes through a hole in the base plate and emerges completely out of and above the base plate, and instructions to clean the bottom surface and/or the edges of the substrate material utilizing the cleaning nozzle based on an optimal exposure thereof.