A method of forming a semiconductor device includes removing a light-sensitive material from a workpiece utilizing polarized electromagnetic radiation and annealing features on the workpiece utilizing electromagnetic radiation polarized in a different direction than the polarized electromagnetic radiation utilized to remove the light-sensitive material. In some embodiments, the electromagnetic radiation used to anneal the features on the workpiece is not polarized. In some described embodiments, light-sensitive material removed from the workpiece is exhausted from the chamber in which the light-sensitive removal process is carried out before it can deposit on surfaces of the chamber.

A coating composition, and uses thereof, including a solvent, metal oxide nanoparticles dispersed in this solvent, and a high carbon polymer dissolved in this solvent, where the high carbon polymer includes a repeat unit of structure (1), a hydroxybiphenyl repeat unit of structure (2) and a moiety containing a fused aromatic containing moiety of structure (3) where R.sub.1 and R.sub.2 are independently selected from the group of hydrogen, an alkyl and a substituted alkyl, Ar is an unsubstituted or substituted fused aromatic ring and X.sub.1 is an alkylene spacer, or a direct valence bound. ##STR00001##

A semiconductor device includes a first semiconductor layer having a first surface and a second surface. A first metal film is disposed on the first surface. An outer portion of the first surface beyond an outer periphery of the first metal film is left uncovered by the first metal film. A semiconductor substrate has an inner region of a first thickness and a peripheral region of a second thickness, greater than the first thickness. A portion of the first semiconductor layer is between the inner region and the first metal layer. The peripheral region of the semiconductor substrate is below the outer portion of the first surface of the first semiconductor layer. A second metal film is below the inner region of the semiconductor substrate and adjacent to the peripheral region of the semiconductor substrate.

A touch panel and a method of manufacturing the touch panel are provided. The touch panel includes a substrate comprising a wiring area and a sensor area, a sensing pattern located on a surface of the substrate in the sensor area, and a wiring line located on the surface of the substrate in the wiring area and electrically connected to the sensing pattern. The sensing pattern includes a plurality of first fine metal lines arranged irregularly in a mesh, and a first photosensitive layer pattern residue located between at least two of the first fine metal lines.

Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

A manufacturing method for an air bridge structure includes forming a first photoresist structure on a substrate. The first photoresist structure includes a first opening that reveals the substrate. The manufacturing method further includes forming a bridge supporting structure on the substrate by depositing an inorganic bridge supporting material on the substrate based on the first opening in the first photoresist structure, and stripping the first photoresist structure after the deposition. Then, the manufacturing method includes forming a second photoresist structure on the substrate. The second photoresist structure includes at least a second opening that reveals at least a portion of the bridge supporting structure on the substrate. Then, the method include forming the air bridge structure by depositing an air bridge material on the substrate based on the second opening and stripping the second photoresist structure after the deposition. Further, the bridge supporting structure can be removed.

Semiconductor device includes a semiconductor layer, an insulating film provided on the semiconductor layer and having an opening formed therein, a gate electrode connected to the semiconductor layer through opening, a protection film covering gate electrode, and a Ni oxide film, wherein the insulating film has a first surface on the semiconductor layer side and a second surface opposite to the first surface, and the gate electrode has a third surface facing the second surface and spaced apart from the second surface and a fourth surface connecting the second surface and the third surface. The gate electrode includes a Ni film constituting the third surface and the fourth surface, and the Ni oxide film covers the Ni film on the third surface and the fourth surface. The protection film covers the third surface and the fourth surface by being placed over Ni oxide film.

This application relates to a photoresist removal method, including: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent in response to an end of the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer in response to an end of the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed.

A method for manufacturing a semiconductor device includes steps of forming a protective film on a semiconductor substrate, forming a resist film on the protective film such that the resist film includes a region where the resist film becomes thicker from a drain electrode to a source electrode, forming a first opening in the resist film by irradiating the resist film in the region with an electron beam and developing the resist film, forming a second opening that exposes an upper surface of the semiconductor substrate by removing the protective film using the resist film in which the first opening is formed as a mask, forming a third opening in the resist film by further developing the resist film after forming the second opening, the third opening being formed by expanding the first opening toward the drain electrode, and forming a gate electrode in the second and the third openings.

A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist layer and the dielectric passivation layer to form a first opening in the dielectric passivation layer, removing the first resist layer; and forming a tri-layer gate having a gate foot in the first opening, the gate foot having a first width, a gate neck extending from the gate foot and extending for a length over the dielectric passivation layer on both sides of the first opening, the gate neck having a second width wider than the first width of the gate foot, and a gate head extending from the gate neck, the gate head having a third width wider than the second width of the gate neck.