A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.

Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.

According to various embodiments, a method may include: forming a first layer on a surface using a first lift-off process; forming a second layer over the first layer using a second lift-off process; wherein the second lift-off process is configured such that the second layer covers at least one sidewall of the first layer at least partially.

This disclosure teaches a method for producing a nano metal mesh. A brittle layer can be deposited onto a flexible substrate, the brittle layer having a thickness on the flexible substrate. The flexible substrate can be bent to produce a plurality of gaps on the brittle material. A material can be deposited at the surface of the flexible substrate filling the gaps of the brittle layer. Then, the brittle layer can be etched from the flexible substrate using an etchant, a nano metal mesh formed by the material previously in the gaps. The disclosure also teaches a nano metal mesh made using this method.

Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

A method of manufacturing an electrical device, comprising: forming a patterned inorganic liftoff layer to expose a target electrode site on a softening polymer layer, depositing an electrode layer on the inorganic liftoff layer and on the exposed target electrode site, and removing the inorganic liftoff layer by a horizontal liftoff etch to leave the electrode layer on the exposed target electrode site.

A method of forming a semiconductor device is disclosed. A sacrificial oxide layer is formed on a substrate having first and second areas. Using a photoresist mask exposing the first area and covering the second area as a mask layer, by a wet etching process, the sacrificial oxide layer in the first area and an edge portion of the sacrificial oxide layer in the second area are simultaneously removed, wherein the sacrificial oxide layer remained in the second area has a sidewall with a slope smaller than 40 degrees. An oxide-nitride-oxide (ONO) layer is formed over the first and second areas. The sacrificial oxide layer and the ONO layer formed thereon in the second area are removed, so that the ONO layer remained in the first area forms a first gate insulating layer in the first area. A second gate insulating layer is formed in the second area.

Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.

Provided is a light emitting device. In one embodiment, a light emitting device including: a support member; a light emitting structure on the support member, the light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member at a peripheral region of an upper surface of the support member; an electrode including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer between the side surface of the light emitting structure and the electrode.

A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.