The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same materialgraphene.

An apparatus and method wherein the apparatus comprises: a sensing material configured to produce a non-random distribution of free charges in response to a parameter; an electric field sensor; a first conductive electrode comprising a first area overlapping the sensing material; an insulator provided between the first conductive electrode and the sensing material; a second electrode comprising a second area adjacent the electric field sensor; and a conductive interconnection between the first conductive electrode and the second conductive electrode.

A method of forming a p-n junction device comprises providing a base layer including a p-type diamond. A monolayer or few layer of a transition metal dichalcogenide (TMDC) is disposed on at least a portion of the base layer so as to form a heterojunction therebetween. The TMDC monolayer is an n-type layer such that the heterojunction between the intrinsic and p-type diamond base layer and the n-type TMDC monolayer is a p-n junction.

A method of manufacturing an integrated circuit (IC) includes forming a first active region in a first cell. The method further includes forming a plurality of second active regions in a second cell, wherein the second cell abuts the first cell, and a height of the second cell is different from a height of the first cell. The method further includes forming a plurality of gate structures extending across each of the first active region and the plurality of second active regions. The method further includes removing a first portion of a first gate structure of the plurality of gate structures at an interface between the first cell and the second cell, wherein the first portion of the first gate structure is between the first active region and the plurality of second active regions.

Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

An apparatus and method, the apparatus comprising: at least one charged substrate (3); a channel of two dimensional material (5); and at least one floating electrode (7A-C) wherein the floating electrode comprises a first area (10A-C) adjacent the at least one charged substrate, a second area (11A-C) adjacent the channel of two dimensional material and a conductive interconnection (9A-C) between the first area and the second area wherein the first area is larger than the second area and wherein the at least one floating electrode is arranged to control the level of doping within the channel of two dimensional material.

Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.

An electronic device, includes: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity.