Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

A method for providing a carbonaceous membrane is disclosed. The method includes forming a sacrificial layer on a first substrate. The method includes forming a carbonaceous membrane on the sacrificial layer. The method includes removing the sacrificial layer, with a first surface of the carbonaceous membrane still facing the first substrate. The method includes completely removing the first substrate from the carbonaceous membrane. The method includes coupling the carbonaceous membrane to a second substrate.

There is provided a method of manufacturing a transistor, the method comprising: (a) providing a substrate having a semiconductor surface; (b) providing a graphene layer structure on a first portion of the semiconductor surface, wherein the graphene layer structure has a thickness of n graphene monolayers, wherein n is at least 2; (c) etching a first portion of the graphene layer structure to reduce the thickness of the graphene layer structure in said first portion to from n?1 to 1 graphene monolayers; (d) forming a layer of dielectric material on the first portion of the graphene layer structure; and (e) providing: a source contact on a second portion of the graphene layer structure; a gate contact on the layer of dielectric material; and a drain contact on a second portion of the semiconductor surface of the substrate.

A semiconductor device according to the present invention includes a substrate having a cell portion and a terminal portion surrounding the cell portion, a surface structure provided on the substrate, and a back surface electrode provided on the back surface of the substrate, the surface structure includes a convex portion protruding upward above the cell portion, and at least a part of the cell portion is thinner than the terminal portion.

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same materialgraphene.

A semiconductor device includes a semiconductor substrate having a main surface and a back surface, a drift region having a first conductivity type, a body region formed in the drift region and having a second conductivity type, a plurality of grooves passing through the body region from the main surface toward the back surface, a gate electrode formed in the plurality of grooves with a gate insulating film interposed therebetween, and an electric field relaxation layer provided below the plurality of grooves in the drift region and having a second conductivity type. The electric field relaxation layer continuously extends over the entire body region.

A biocompatible, implantable electrode for electrically active medical devices. The implantable medical electrode has a surface geometry which optimizes the electrical performance of the electrode, while mitigating the undesirable effects associated with prior art porous surfaces. The electrode has an optimized surface topography for improved electrical performance. Such a electrode is suitable for devices which may be permanently implanted in the human body as stimulation electrodes, such as pacemakers, or as sensors of medical conditions. Such is achieved by the application of ultrafast high energy pulses to the surface of a solid, monolithic electrode material for the purpose of increasing the surface area and thereby decreasing its after-potential polarization. In addition, the electrode material comprises a biocompatible metal having a minimal or eliminated amount of metal oxides which are detrimental to electrode performance.

A waveguide fabrication method including the steps of providing a substrate including at least one waveguide recess structure and a stress release recess structure for receiving a waveguide material, and depositing the waveguide material onto the substrate and into both the waveguide recess structure and the stress release recess structure.