Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.

Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a substrate wafer that includes a glass substrate (or a silicon substrate covered by a protection layer) is glass bonded to the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.

A method for fabricating a semiconductor wafer is provided, where the semiconductor wafer includes a diamond layer and a semiconductor layer having III-Nitride compounds. The method includes the steps of: disposing a nucleation layer on a SiC substrate and disposing at least one semiconductor layer on the nucleation layer, the at least one semiconductor layer including a III-Nitride compound. The method further includes the steps of: disposing a protection layer on the at least one semiconductor layer; bonding a carrier wafer to the protection layer, the carrier wafer including a SiC substrate; removing the substrate, the nucleation layer and a portion of the at least one semiconductor layer; disposing a diamond layer on the at least one semiconductor layer; depositing a substrate wafer on the diamond layer; and removing the carrier wafer and the protection layer.

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

A method for fabricating a semiconductor wafer is provided, where the semiconductor wafer includes a diamond layer and a semiconductor layer having III-Nitride compounds. The method includes the steps of: disposing a nucleation layer on a SiC substrate and disposing at least one semiconductor layer on the nucleation layer, the at least one semiconductor layer including a III-Nitride compound. The method further includes the steps of: disposing a protection layer on the at least one semiconductor layer; bonding a carrier wafer to the protection layer, the carrier wafer including a SiC substrate; removing the substrate, the nucleation layer and a portion of the at least one semiconductor layer; disposing a diamond layer on the at least one semiconductor layer; depositing a substrate wafer on the diamond layer; and removing the carrier wafer and the protection layer.

Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a first diamond layer are sequentially deposited on the III-Nitride layer. Next, the silicon carrier wafer and the protection layer are removed. Then, a silicon substrate wafer that includes a protection layer, silicon substrate and a diamond layer is prepared and glass bonded to the first diamond layer.

Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.

Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a substrate wafer that includes a glass substrate (or a silicon substrate covered by a protection layer) is glass bonded to the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.

A system and method for fabricating at least one of, a molecular device element and a TBELMD including depositing a first electrode material on an insulating substrate or layer, performing a photolithography process in the first electrode material, creating a trench component in the first electrode material with the photolithography process, determining a section of the electrode material to remove based on at least one of, a molecular device element and a TBELMD to be produced, removing the section of said first electrode material, oxidizing a portion of the first electrode material, creating a first insulator part from the oxidized portion of the first electrode material, in which the oxidized portion of the first electrode material includes at least a first electrode metal surface, depositing a second electrode material, and bridging the first and second electrode material.

A manufacturing method of a touch panel includes the steps of providing a substrate, forming a first conductive film on the substrate, forming a first mask on the first conductive film, etching the first conductive film to form electrode portions and lower intersect portions of the touch panel, forming an insulating film made of a negative resist on the first conductive film, and forming a contact hole above the electrode portion by removing the insulating film. The steps further include forming a second conductive film on the insulating film, forming a second mask on the second conductive film, etching the second conductive film to form an upper intersect portion connected between two adjacent electrode portions via the contact hole and intersecting with the lower intersect portion, and forming protective film on the second conductive film.