According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH.sub.4), a carbon-donating precursor, and nitrogen gas (N.sub.2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.

The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby. The method comprises: providing a gallium oxide single-crystal wafer (1) having an implantation surface (1a) (S1); performing an ion implantation from the implantation surface (1a) into the gallium oxide single-crystal wafer (1), such that implanted ions reach a preset depth and an implantation defect layer (11) is formed at the preset depth (S2); bonding the implantation surface (1a) to a high thermal conductivity substrate (2) to obtain a first composite structure (S3); performing an annealing treatment on the first composite structure such that the gallium oxide single-crystal wafer (1) in the first composite structure is peeled off along the implantation defect layer (11), thereby obtaining a second composite structure and a third composite structure (S4); and performing a surface treatment on the second composite structure to remove a first damaged layer (111), so as to obtain a gallium oxide semiconductor structure comprising a first gallium oxide layer (12) and the high thermal conductivity substrate (2) (S5). In the gallium oxide semiconductor structure formed using the above method, the first gallium oxide layer (12) is integrated with the high thermal conductivity substrate (2) to effectively improve the thermal conductivity of the first gallium oxide layer (12).

Provided is a semiconductor device manufacturing method in which semiconductor elements are formed into multiple layers through the lamination of wafers in which the semiconductor elements are fabricated, the method being suited for efficiently creating multiple layers of thin wafers while suppressing warping of a wafer laminate. The method of the present invention includes a preparation step, a thinning step, a bonding step, a removal step, and a multilayering step. In the preparation step, a reinforced wafer is prepared, the reinforced wafer having a laminated structure that includes: a wafer including an element forming surface and a back surface opposite from the element forming surface; a supporting substrate; and a temporary adhesive layer for forming temporary adhesion, the temporary adhesive layer being provided between the element forming surface side of the wafer and the supporting substrate.

Embodiments of semiconductor devices and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including a plurality of first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The semiconductor device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, first dielectric material layers overlying the first semiconductor devices, and first metal interconnect structures, providing a second semiconductor die containing a second substrate, second semiconductor devices, second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures, depositing a manganese layer on a top surface of the first dielectric material layers, disposing the second semiconductor die on the manganese layer such that a surface of the second dielectric material layers contacts the manganese layer, and performing a bonding anneal to bond the first semiconductor die to the second semiconductor die and to convert the manganese layer into a manganese-containing oxide layer, such that the manganese-containing oxide layer is bonded to the first dielectric material layers and the second dielectric material layers.

A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.

A bonding apparatus configured to bond a first substrate and a second substrate includes a first holder configured to hold the first substrate; a second holder configured to hold the second substrate; a first imaging device provided at the first holder and configured to image the second substrate held by the second holder; a first light irradiating device provided at the first holder and configured to irradiate light to the second substrate when the second substrate is imaged; a second imaging device provided at the second holder and configured to image the first substrate held by the first holder; and a second light irradiating device provided at the second holder and configured to irradiate light to the first substrate when the first substrate is imaged. Each of the first light irradiating device and the second light irradiating device is connected to a first light source configured to irradiate white light.

A process for fabricating a component includes an operation of transferring at least one layer of one or more piezoelectric or pyroelectric or ferroelectric materials forming part of a donor substrate to a final substrate, the process comprising a prior step of joining the layer to a temporary substrate via production of a fragile separating region between the donor substrate of single-crystal piezoelectric or pyroelectric or ferroelectric material and the temporary substrate, the region comprising at least two layers of different materials in order to ensure two compounds apt to generate an interdiffusion of one or more constituent elements of at least one of the two compounds make contact, the fragile region allowing the temporary substrate to be separated.

A surface activated bonding method by ion or atom bombardment of a first surface of a first substrate to a second surface of a second substrate, the material of the first substrate at the first surface including at least two chemical species, one of which, called the species of interest, becomes depleted upon activation by ion or atom bombardment, the method including depositing a layer of the species of interest onto the first surface of the first substrate; activating the first surface by bombarding the first surface with an ion or atom beam so as to consume the entire previously deposited layer of species; and activating the second surface by bombarding the second surface with an ion or atom beam; and contacting the first surface of the first substrate with the second surface of the second substrate.