Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.

A method includes transferring a layer onto a flexible substrate, the layer being located in a stack on the front face of the substrate. The substrate includes at least one supplementary stack interposed between the stack and the bulk layer of the substrate. This supplementary stack includes at least two layers with thicknesses decreasing in the direction of the front face. The method makes provision, after bonding the flexible substrate on the front face, for successively and gradually removing the various layers of the substrate. Such gradualness makes it possible to transfer a thin layer of silicon, with a thickness of less than 50 nm, onto a flexible substrate.

A method of manufacturing a semiconductor element includes forming a mask on a front surface of a substrate, the mask having an opening to expose the front surface; growing a first semiconductor layer by epitaxially growing a semiconductor along the mask, starting from the front surface exposed through the opening, and growing a second semiconductor layer on a surface of the first semiconductor layer located opposite to the substrate in a layering direction, and providing an electrode on a surface of the second semiconductor layer located opposite to the surface of the first semiconductor layer in the layering direction. A width from an end portion of the surface to the electrode is smaller than a width of the mask.

A semiconductor device manufacturing method of an embodiment includes forming a first layer in a region of a first substrate excluding an outer peripheral portion thereof; forming a first semiconductor circuit above the first layer; for a second semiconductor circuit on a second substrate; forming a second layer with a predetermined width at an outer peripheral portion of the second substrate; bonding a surface of the first substrate on a side provided with the first semiconductor circuit and a surface of the second substrate on a side provided with the second semiconductor circuit; and applying tensile stress to the first layer and the second layer to debond the first layer and the second layer, thereby forming the second substrate including the first semiconductor circuit and the second semiconductor circuit.

Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded faster.

A vapor phase growth device includes a flow channel defining a space through which a source gas for forming an epi layer flows, a susceptor configured to hold a substrate in a state where the substrate faces the space, and a first member disposed vertically above and opposite to the susceptor, the first member having a thermal expansion coefficient not less than 0.7 times and not more than 1.3 times the thermal expansion coefficient of the substrate. The flow channel includes a holding portion configured to hold the first member.

Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first A1N layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first A1N layer. By the method, the first A1N layer and the first AlGaN layer respectively correspond to a nucleation layer and a buffer layer when the function layer is epitaxially grown, to improve the quality of the function layer.

A method includes selectively etching a region of a substrate using a germanium-containing gas, wherein the region of the substrate consists of Si and another material, and the other material consists of SiGe. The method further includes wherein the region has a laminated structure having a SiGe film over a Si film.

A method includes selectively etching a region of a substrate using a germanium-containing gas, wherein the region of the substrate consists of Si and another material, and the other material consists of SiGe. The method further includes wherein the region has a laminated structure having a SiGe film over a Si film.

A method for surface treatment of an at least primarily crystalline substrate surface of a substrate such that by amorphization of the substrate surface, an amorphous layer is formed at the substrate surface with a thickness d>0 nm of the amorphous layer. This invention also relates to a corresponding device for surface treatment of substrates.