The present invention provides a selector material, a selector unit and a preparation method thereof and a memory structure, wherein the selector material comprises at least one of Te, Se and S, that is, the selector material is selected from a simple substance such as Te, Se and S or compounds composed of any of these elements, further, the performance can be improved by doping with elements such as O, N, Ga, In, As and the like, or oxides, nitrides and carbides or other dielectric materials. The selector material in the present invention has the advantages of high turn-on current, simple material, fast switching speed, good repeatability and low toxicity when the selector material is used in the selector unit, which is beneficial to achieving high-density three-dimensional information storage.

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

Provided are spectrometers utilizing surface plasmons and surface plasmon resonance. The spectrometer includes a substrate including a region having a permittivity slope (varying permittivity), a dielectric spacer configured to correspond to the region having a permittivity slope, and a detector configured to face the region having a permittivity slope with the dielectric spacer therebetween. The region having a permittivity slope includes a region having a dopant concentration slope (varying concentration).

Provided are spectrometers utilizing surface plasmons and surface plasmon resonance. The spectrometer includes a substrate including a region having a permittivity slope (varying permittivity), a dielectric spacer configured to correspond to the region having a permittivity slope, and a detector configured to face the region having a permittivity slope with the dielectric spacer therebetween. The region having a permittivity slope includes a region having a dopant concentration slope (varying concentration).

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

An electrode structure with an alloy interface is provided. In one aspect, a method of forming a contact structure includes: patterning a via in a first dielectric layer; depositing a barrier layer onto the first dielectric layer, lining the via; depositing and polishing a first metal layer (Element A) into the via to form a contact in the via; depositing a second metal layer (Element B) onto the contact in the via; annealing the first and second metal layers under conditions sufficient to form an alloy AB; depositing a third metal layer onto the second metal layer; patterning the second and third metal layers into a pedestal stack over the contact to form an electrode over the contact, wherein the alloy AB is present at an interface of the electrode and the contact; and depositing a second dielectric that surrounds the pedestal stack. A contact structure is also provided.