A method of scanning a substrate includes immobilizing a substrate on a substrate holder within a processing chamber and performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move the substrate relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate holder. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

A method of scanning a substrate includes immobilizing a substrate on a substrate holder within a processing chamber and performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move the substrate relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate holder. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

Embodiments of the present disclosure generally relate to methods, apparatus, and systems for maintaining film modulus within a predetermined modulus range. In one implementation, a method of processing substrates includes introducing one or more processing gases to a processing volume of a processing chamber, and depositing a film on a substrate supported on a substrate support disposed in the processing volume. The method includes supplying simultaneously a first radiofrequency (RF) power and a second RF power to one or more bias electrodes of the substrate support. The first RF power includes a first RF frequency and the second RF power includes a second RF frequency that is less than the first RF frequency. A modulus of the film is maintained within a predetermined modulus range.

Even a radiation thermometer using a quantum infrared sensor appropriately measures the temperature of a substrate irradiated with a flash of light. A heat treatment apparatus includes a quantum infrared sensor configured to measure a temperature of the first substrate and a temperature of the second substrate. The heat treatment apparatus further includes a temperature correction unit configured to correct, using a correction coefficient calculated based on the reference temperature and the shift temperature, a temperature of the second substrate on which second heat treatment having irradiation with the flash of light is performed, the temperature being measured by the quantum infrared sensor.

Wafer bonding apparatus and method are provided. A method includes performing a first plasma activation process on a first surface of a first wafer. The first plasma activation process forms a first high-activation region and a first low-activation region on the first surface of the first wafer. A first cleaning process is performed on the first surface of the first wafer. The first cleaning process forms a first plurality of silanol groups in the first high-activation region and the first low-activation region. The first high-activation region includes more silanol groups than the first low-activation region. The first wafer is bonded to a second wafer.

Wafer bonding apparatus and method are provided. A method includes performing a first plasma activation process on a first surface of a first wafer. The first plasma activation process forms a first high-activation region and a first low-activation region on the first surface of the first wafer. A first cleaning process is performed on the first surface of the first wafer. The first cleaning process forms a first plurality of silanol groups in the first high-activation region and the first low-activation region. The first high-activation region includes more silanol groups than the first low-activation region. The first wafer is bonded to a second wafer.

A semiconductor device comprises: a substrate; a well region provided in the substrate, having a second conductivity type; source regions having a first conductivity type; body tile regions having the second conductivity type, the source regions and the body tie regions being alternately arranged in a conductive channel width direction so as to form a first region extending along the conductive channel width direction, and a boundary where the edges of the source regions and the edges of the body tie regions are alternately arranged being formed on two sides of the first region; and a conductive auxiliary region having the first conductivity type, provided on at least one side of the first region, and directly contacting the boundary, a contact part comprising the edge of at least one source region on the boundary and the edge of at least one body tie region on the boundary.

Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. The structure includes a drift well in a semiconductor substrate, source and drain regions in the semiconductor substrate, a gate dielectric layer on the semiconductor substrate, and a buffer dielectric layer on the semiconductor substrate over the drift well. The buffer dielectric layer includes a first side edge adjacent to the drain region, a second side edge adjacent to the gate dielectric layer, a first section extending from the second side edge to the first side edge, and a plurality of second sections extending from the second side edge toward the first side edge. The first section has a first thickness, and the second sections have a second thickness less than the first thickness. A gate electrode includes respective portions that overlap with the buffer dielectric layer and with the gate dielectric layer.

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.