A method of scanning a substrate includes performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move a substrate within a processing chamber relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

A method of scanning a substrate includes performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move a substrate within a processing chamber relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

A plasma generation system is provided that includes an elongated plasma chamber having a first elongated side wall substantially parallel to a longitudinal axis extending through the plasma chamber and a gas delivery device for delivering a gas to the plasma chamber via the first elongated side wall. The gas delivery device includes at least one input port for receiving a source of the gas and a plurality of output ports for delivering portions of the gas to the plasma chamber. The gas delivery device also includes a network of gas delivery paths comprising at least one branch point between the at least one input port and the plurality of output ports. The at least one branch point is directly connected to (i) an input node and (ii) at least two output nodes that are positioned offset from the branch point along the longitudinal axis.

A method of controlling formation of junctions in a lateral bipolar junction transistor comprises: providing a starting substrate comprising a bulk silicon material as a handle substrate, a buried oxide layer on the handle substrate, and an intrinsic base semiconductor layer of germanium on the buried oxide layer; forming an extrinsic base layer on the intrinsic base semiconductor layer; etching at least a portion of the base layer; disposing a sidewall spacer on a side of the base layer; disposing a faceted germanium layer adjacent the sidewall spacer; recessing the faceted germanium layer and the intrinsic base semiconductor layer below the sidewall spacer; using a hot angle ion implantation technique to implant ions into a side of the intrinsic base semiconductor layer to form a junction edge/profile; annealing the implanted ions; and epitaxially growing a Si or SiGe layer on the germanium layer and the junction edge/profile.

A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

An embodiment of a structure provides an enhanced performing high voltage device, configured as a lateral diffused MOS (HV LDMOS) formed in a tri-well structure (a small n-well in an extended p-type well inside an n-type well) within the substrate with an anti-punch through layer and a buried layer below the n-type well, which reduces substrate leakage current to almost zero. The drain region is separated into two regions, one within the small n-well and one contacting the outer n-type well such that the substrate is available for electric potential lines during when a high drain voltage is applied.

A semiconductor device preferably includes a substrate, a fin-shaped structure on the substrate, a buffer layer on the fin-shaped structure, and an epitaxial layer on the buffer layer. Preferably, the buffer layer is made of silicon germanium and including three or more than three elements. The buffer layer also includes dopants selected from the group consisting of P, As, Sb, Bi, C, and F.

Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.