A bonded assembly of a first wafer including a first semiconductor substrate and a second wafer including a second semiconductor substrate may be formed. The second semiconductor substrate may be thinned to a first thickness, and an inter-wafer moat trench may be formed at a periphery of the bonded assembly. A protective material layer may be formed in the inter-wafer moat trench and over the backside surface of the second semiconductor substrate. A peripheral portion of the second semiconductor substrate located outside the inter-wafer moat trench may be removed, and a cylindrical portion of the protective material layer laterally surrounds a remaining portion of the bonded assembly. The second semiconductor substrate may be thinned to a second thickness by performing at least one thinning process while the cylindrical portion of the protective material layer protects the remaining portion of the bonded assembly.

A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

A pressure-sensitive adhesive sheet capable of allowing a small electronic part to be temporarily fixed in a satisfactory manner and satisfactorily peeled. The pressure-sensitive adhesive sheet includes: a gas-generating layer; and a gas barrier layer arranged on at least one side of the gas-generating layer, wherein the gas barrier layer is a layer that is deformed through laser light irradiation of the pressure-sensitive adhesive sheet, wherein a thickness (μm) of a highly elastic portion of the gas barrier layer is equal to or smaller than a value calculated by the following expression (1), and wherein the thickness (μm) of the highly elastic portion of the gas barrier layer is equal to or larger than a value calculated by the following expression (2): 12546×EXP(−0.728×log.sub.10(Er×10.sup.6)) . . . (1); 18096×EXP(−0.949×log.sub.10(Er×10.sup.6)) . . . (2), where Er represents a modulus of elasticity (MPa) of the highly elastic portion of the gas barrier layer by a nanoindentation method at 25° C.

A pressure-sensitive adhesive sheet capable of allowing a small electronic part to be temporarily fixed in a satisfactory manner and satisfactorily peeled. The pressure-sensitive adhesive sheet includes: a gas-generating layer; and a gas barrier layer arranged on at least one side of the gas-generating layer, wherein the gas barrier layer is a layer that is deformed through laser light irradiation of the pressure-sensitive adhesive sheet, wherein a thickness (μm) of a highly elastic portion of the gas barrier layer is equal to or smaller than a value calculated by the following expression (1), and wherein the thickness (μm) of the highly elastic portion of the gas barrier layer is equal to or larger than a value calculated by the following expression (2): 12546×EXP(−0.728×log.sub.10(Er×10.sup.6)) . . . (1); 18096×EXP(−0.949×log.sub.10(Er×10.sup.6)) . . . (2), where Er represents a modulus of elasticity (MPa) of the highly elastic portion of the gas barrier layer by a nanoindentation method at 25° C.

A method for forming a nanostructure includes coating an exposed surface of a base layer with a patterning layer. The method further includes forming a pattern in the patterning layer including nano-patterned non-random openings, such that a bottom portion of the non-random openings provides direct access to the exposed surface of the base layer. The method also includes depositing a material in the non-random openings in the patterning layer, such that the material contacts the exposed surface to produce repeating individually articulated nano-scale features. The method includes removing remaining portions of the patterning layer. The method further includes forming an encapsulation layer on exposed surfaces of the repeating individually articulated nanoscale features and the exposed surface of the base layer.

Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

A band-shaped Si pillar having a mask material layer on the top portion thereof is formed on a P+ layer. SiGe layers having mask material layers on the top portions thereof are then formed in contact with the side surfaces of the band-shaped Si pillar and the surfaces of N+ layers and the P+ layer. Si layers having mask material layers on the top portions thereof are then formed in contact with the side surfaces of the SiGe layers and the surfaces of the N+ layers. The outer peripheries of the bottom portions of the Si layers are then removed using the mask material layers as a mask to form band-shaped Si pillars. The mask material layers and the SiGe layers are then removed. Si pillars separated in the Y direction are then formed in the band-shaped Si pillars.

Provided is a laser adjustment method including: a first preparation process of acquiring an image including an image of a first damage formed in a first film due to irradiation of a first film wafer including a first wafer and the first film provided in the first wafer with first laser light as a first damage image; a second preparation process of preparing a second film wafer including a second wafer and a second film provided in the second wafer; a processing process of irradiating the second film wafer with second laser light after the first preparation process and the second preparation process to form a second damage in the second film; an imaging process of imaging the second film to acquire an image including an image of the second damage as a second damage image after the processing process; and an adjustment process of adjusting an aberration.

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.