A thin-film transistor, a liquid crystal display panel, and a thin-film transistor manufacturing method are provided. The thin-film transistor includes a base plate and a gate electrode, a gate insulation layer, a source electrode, a drain electrode, a channel layer, first and second ohmic contact layers, a passivation layer, and a pixel electrode that are arranged on the same side of the base plate. The gate insulation layer covers the gate electrode that is on the base plate. The source electrode, the drain electrode, the channel layer, the first and second ohmic contact layers are arranged on the gate insulation layer. The channel layer is arranged between the source electrode and the drain electrode and corresponds to the gate electrode. The first ohmic contact layer is arranged between the source electrode and the channel layer. The second ohmic contact layer is arranged between the drain electrode and the channel layer.

Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 10.sup.8 W cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.

Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 10.sup.8 W cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.

A semiconductor device is provided in which a semiconductor substrate can be prevented from being broken while elements can be prevented from being destroyed by a snap-back phenomenon. After an MOS gate structure is formed in a front surface of an FZ wafer, a rear surface of the FZ wafer is ground. Then, the ground surface is irradiated with protons and irradiated with two kinds of laser beams different in wavelength simultaneously to thereby form an N.sup.+ first buffer layer and an N second buffer layer. Then, a P+ collector layer and a collector electrode are formed on the proton-irradiated surface. The distance from a position where the net doping concentration of the N.sup.+ first buffer layer is locally maximized to the interface between the P+ collector layer and the N second buffer layer is set to be in a range of 5 m to 30 m, both inclusively.

Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

A thin-film transistor, a liquid crystal display panel, and a thin-film transistor manufacturing method are provided. The thin-film transistor includes a base plate and a gate electrode, a gate insulation layer, a source electrode, a drain electrode, a channel layer, first and second ohmic contact layers, a passivation layer, and a pixel electrode that are arranged on the same side of the base plate. The gate insulation layer covers the gate electrode that is on the base plate. The source electrode, the drain electrode, the channel layer, the first and second ohmic contact layers are arranged on the gate insulation layer. The channel layer is arranged between the source electrode and the drain electrode and corresponds to the gate electrode. The first ohmic contact layer is arranged between the source electrode and the channel layer. The second ohmic contact layer is arranged between the drain electrode and the channel layer.

A thin-film transistor, a liquid crystal display panel, and a thin-film transistor manufacturing method are provided. The thin-film transistor includes a base plate and a gate electrode, a gate insulation layer, a source electrode, a drain electrode, a channel layer, first and second ohmic contact layers, a passivation layer, and a pixel electrode that are arranged on the same side of the base plate. The gate insulation layer covers the gate electrode that is on the base plate. The source electrode, the drain electrode, the channel layer, the first and second ohmic contact layers are arranged on the gate insulation layer. The channel layer is arranged between the source electrode and the drain electrode and corresponds to the gate electrode. The first ohmic contact layer is arranged between the source electrode and the channel layer. The second ohmic contact layer is arranged between the drain electrode and the channel layer.

A method makes an electromagnetic radiation detecting device including at least one thermal detector with an absorbent membrane suspended above a substrate, intended to be located in a sealed cavity. The method includes depositing, on the substrate, a gettering metallic layer including a metallic material with a gettering effect; depositing a carbonaceous sacrificial layer of amorphous carbon on the gettering metallic layer; depositing at least one sacrificial mineral layer on the carbonaceous sacrificial layer; chemical-mechanical planarization of the sacrificial mineral layer; fabricating the thermal detector so that the absorbent membrane is produced on the sacrificial mineral layer; removing the sacrificial mineral layer; and removing the carbonaceous sacrificial layer.

A process for the manufacture of a composite structure includes the following stages: a) providing a donor substrate comprising a first surface and a support substrate; b) forming a zone of weakening in the donor substrate, the zone of weakening delimiting, with the first surface of the donor substrate, a working layer; c) assembling the support substrate and the donor substrate; d) fracturing the donor substrate along the zone of weakening; and e) thinning the working layer so as to form a thinned working layer. Stage b) is carried out so that the working layer exhibits a thickness profile appropriate for compensating for the nonuniformity in consumption of the working layer during stage e).

Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 10.sup.8 cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.