H01L21/4803

METHOD OF MECHANICAL SEPARATION FOR A DOUBLE LAYER TRANSFER
20210118717 · 2021-04-22 ·

The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

System for applying interface materials
11014203 · 2021-05-25 ·

A system for applying thermal interface materials to components includes a supply of thermal interface material and a die. The die is operable for pushing against and/or removing a portion of the thermal interface material that is between the die and a corresponding one of the components. The portion of the thermal interface material is removed from the supply and applied to the corresponding one of the components.

MICROELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

A device includes a MOS transistor and a bipolar transistor at a same first portion of a substrate. The first portion includes a first well doped with a first type forming the channel of the MOS transistor and two first regions doped with a second type opposite to the first type that are arranged in the first well which form the source and drain of the MOS transistor. The first portion further includes: a second well doped with the second type that is arranged laterally with respect to the first well to form the base of the bipolar transistor; a second region doped with the first type that is arranged in the second well to form the emitter of the bipolar transistor; and a third region doped with the first type that is arranged under the second well to form the collector of the bipolar transistor.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device including an insulated circuit board on which a semiconductor chip is mounted, and a housing implemented by a plurality of side-walls including at least a first pair of facing side-walls, each of the facing side-walls having joint edges configured to be jointed with the insulated circuit board, and each of the joint edges has an arc-shape such that a center in an extending direction of the joint edge protrudes toward the insulated circuit board more than both ends of the extending direction of the joint edge.

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

In one example, a semiconductor package comprises a substrate having a top surface and a bottom surface, an electronic device mounted on the top surface of the substrate and coupled to one or more interconnects on the bottom surface of the substrate, a cover over the electronic device, a casing around a periphery of the cover, and an encapsulant between the cover and the casing and the substrate.

CLEANED PACKAGING SUBSTRATE AND CLEANED PACKAGING SUBSTRATE MANUFACTURING METHOD
20230411172 · 2023-12-21 · ·

A manufacturing method for a cleaned packaging substrate is provided. The method is applied to a manufacturing process for a glass substrate or a packaging substrate comprising the same, and comprises a preparing process of disposing a target substrate inside a chamber; and a removing process of jetting ionized air on at least one surface of the target substrate to separate particle impurities, and manufacturing a cleaned packaging substrate. The target substrate is a glass packaging substrate, or a packaging substrate, and the packaging substrate comprises the glass packaging substrate and a redistribution layer disposed on at least one surface of the glass packaging substrate.

INTERPOSER FRAME AND METHOD OF MANUFACTURING THE SAME
20210074692 · 2021-03-11 ·

Some embodiments relate to a package. The package includes a first substrate, a second substrate, and an interposer frame between the first and second substrates. The first substrate has a first connection pad disposed on a first face thereof, and the second substrate has a second connection pad disposed on a second face thereof. The interposer frame is arranged between the first and second faces and generally separates the first substrate from the second substrate. The interposer frame includes a plurality of through substrate holes (TSHs) which pass entirely through the interposer frame. A TSH is aligned with the first and second connection pads, and solder extends through the TSH to electrically connect the first connection pad to the second connection pad.

Process for producing package for mounting a semiconductor element and mold release film
10913183 · 2021-02-09 · ·

To provide a process for producing a package for mounting a semiconductor element by using a mold, said a package for mounting a semiconductor element comprising a substrate having a mounting surface for mounting a semiconductor element and a packaging body formed from a cured product of a curable resin and having a frame-shaped portion surrounding the mounting surface, and the package has a concave portion formed by the mounting surface and the packaging body, which allows it to prevent resin burrs without occurrence of dents or damage of a substrate and failure in releasing from a mold, and to provide a mold release film to be suitably used for the production process. A mold release film having a substantially constant thickness over the film, is disposed on the upper mold having a convex portion of which shape corresponds to the concave portion, the substrate is disposed on the lower portion, the upper mold and the lower mold are closed so as to be in close contact with the convex portion to the mounting portion of the substrate via the mold release film, a space formed between the upper mold and the lower mold is filled with a curable resin, followed by curing the curable resin, and the cured product is released together with the substrate, from the mold.

Printed board and light emitting device

A printed board includes: a plate-shaped base member having an upper surface and a lower surface opposite the upper surface and having an insulation property; a first metal layer disposed on the upper surface; and a second metal layer disposed on the lower surface. The base member has a through-hole penetrating the base member in a thickness direction thereof. The second metal layer is spaced apart from the through-hole by a predetermined distance in a bottom view. The printed board may further include a third metal layer that continuously covers the first metal layer, the second metal layer, and an inner surface of the through-hole. A light emitting device includes the printed board and a light emitting element mounted on the printed board such as to be electrically connected with a wiring pattern composed of the first metal layer, the second metal layer, and the third metal layer.

Printed board, light emitting device, and method for manufacturing same

A method for manufacturing a printed board includes steps of; providing a starting board comprising a base member having a plate-like shape, having an upper surface and a lower surface opposite the upper surface, and having an insulation property, a first metal layer disposed on the upper surface, and a second metal layer disposed on the lower surface; and laser machining a through-hole penetrating the starting board in a thickness direction of the starting board by irradiating a laser beam irradiation area of the starting board with a laser beam from a side of the starting board on which side the first metal layer is disposed. The method further includes a step of etching the second metal layer so as to remove a portion of the second metal layer located in the laser beam irradiation area, prior to the step of laser machining.