Embodiments of a silicon heat-dissipation package for compact electronic devices are described. In one aspect, a device includes first and second silicon cover plates. The first silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The second silicon cover plate has a first primary side and a second primary side opposite the first primary side thereof. The first primary side of the second silicon cover plate includes an indentation configured to accommodate an electronic device therein. The first primary side of the second silicon cover plate is configured to mate with the second primary side of the first silicon cover plate when the first silicon cover plate and the second silicon cover plate are joined together with the electronic device sandwiched therebetween.

For a power module comprising at least three levels stacked one above another, including: at least one heat sink (10) having a top side (11), at least one adhesion-promoting intermediate layer (20) applied to the top side (11) of the heat sink (10) and extending in a planar fashion and having a first side (21), which faces the top side (11) of the heat sink (10), and a second side (22), which faces away from the first side (21), at least one metallic layer (30) arranged on the second side (22) of the intermediate layer (20) and subdivided into conductor track sections (31) and having a contact side (32), which faces the second side (22) of the intermediate layer (20), wherein the power module furthermore comprises at least one electronic power component (40) which is applied to at least one conductor track section (31) of the metallic layer (30) and is electrically contacted electrically with the at least one conductor track section (31) of the metallic layer (30), it is proposed that the metallic layer (30) subdivided into conductor track sections (31) is produced from at least one metal sheet subdivided into conductor track sections (31) independently of the production of the intermediate layer (20) and the heat sink (10).

A semiconductor package structure includes a substrate, a semiconductor sensor, a lid and an air-permeable film. The semiconductor sensor is disposed on the substrate. The lid covers the semiconductor sensor and defines a through hole. The air-permeable film covers the through hole of the lid and has a first surface. The first surface is hydrophilic.

A semiconductor package including: a package substrate including a base die disposed on a top surface of the package substrate, the base die including a plurality of electrical components disposed on a top surface of the base die, the plurality of electrical components including a first electrical component configured adjacent to a second electrical component, wherein the first electrical component and the second electrical component have an asymmetric form-factor; and a stiffener including: a stiffener main portion, wherein the stiffener main portion is affixed to the top surface of the package substrate and configured at least partially surrounding the base die; and a stiffener extension portion configured to extend from the stiffener main portion to be disposed at least partially over the top surface of the base die adjacent to the first electrical component and the second electrical component.

Disclosed herein are methods for making a thin film device and/or for reducing warp in a thin film device, the methods comprising applying at least one metal film to a convex surface of a glass substrate, wherein the glass substrate is substantially dome-shaped. Other methods disclosed include methods of determining the concavity of a glass sheet. The method includes determining the orientation of the concavity and measuring a magnitude of the edge lift of the sheet when the sheet is supported by a flat surface and acted upon by gravity. Thin film devices made according to these methods and display devices comprising such thin film devices are also disclosed herein.

A semiconductor package includes a semiconductor chip and a polydimethylsiloxane (PDMS) layer that is provided on the semiconductor chip and of which upper surface is exposed to the outside. Since the semiconductor package may include the PDMS layer, heat emitting performance of the semiconductor package in a vacuum state may improve.

Some embodiments relate to a package. The package includes a first substrate, a second substrate, and an interposer frame between the first and second substrates. The first substrate has a first connection pad disposed on a first face thereof, and the second substrate has a second connection pad disposed on a second face thereof. The interposer frame is arranged between the first and second faces and generally separates the first substrate from the second substrate. The interposer frame includes a plurality of through substrate holes (TSHs) which pass entirely through the interposer frame. A TSH is aligned with the first and second connection pads, and solder extends through the TSH to electrically connect the first connection pad to the second connection pad.

A processing method for a plate-shaped workpiece that has a transparent substrate, a first resin layer stacked on a front surface of the substrate, and a second resin layer stacked on a back surface of the substrate and in which the first resin layer is segmented into plural regions by plural planned dividing lines that intersect each other, includes sticking an expandable adhesive tape to the second resin layer, irradiating the workpiece with a laser beam with such a wavelength as to be absorbed by the first resin layer and transmitted through the transparent substrate, the laser beam removing the first resin layer along the planned dividing lines by ablation, the laser beam also forming a modified layer whose refractive index or mechanical strength is different from surroundings along the planned dividing lines.

A high resistivity wafer with a heat dissipation structure includes a high resistivity wafer and a metal structure. The high resistivity wafer includes a heat dissipation region and a device support region. The high resistivity wafer consists of an insulating material. The metal structure is only embedded within the heat dissipation region of the high resistivity wafer. The metal structure surrounds the device support region.

A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 m or less.