A semiconductor device includes a diamond substrate made of diamond, and a nitride semiconductor layer formed in a recess formed at an upper surface of the diamond substrate. The semiconductor device further includes at least one of: (A) the nitride semiconductor layer formed to be surrounded entirely by the upper surface of the diamond substrate in a plan view; (B) the diamond substrate in which the upper surface of the diamond substrate and an upper surface of the nitride semiconductor layer are located on the same plane; and (C) the diamond substrate having electrical insulating properties.

According to an aspect of the present disclosure, a semiconductor device includes a substrate, a resin case surrounding a region just above the substrate in a planar view, a semiconductor chip provided in the region and an electrode including a first portion pulled out from an upper surface of the resin case and a second portion provided below the upper surface of the resin case and to be inserted into the resin case, and being electrically connected to the semiconductor chip, wherein a first notch is formed over the first portion to the second portion in the electrode, and a first groove is formed to expose a portion, formed in the second portion, in the first notch on the upper surface of the resin case.

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO.sub.3 to various conventional substrates in a process for making various novel optical and acoustic devices.

In one example, a semiconductor package comprises a substrate having a top surface and a bottom surface, an electronic device mounted on the top surface of the substrate and coupled to one or more interconnects on the bottom surface of the substrate, a cover over the electronic device, a casing around a periphery of the cover, and an encapsulant between the cover and the casing and the substrate.

A device may include a first package and a second package where the first package has a warped shape. First connectors attached to a redistribution structure of the first package include a spacer embedded therein. Second connectors attached to the redistribution structure are fee from the spacer, the spacer of the first connectors keeping a minimum distance between the first package and the second package during attaching the first package to the second package.

Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.

Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

A method for manufacturing an electrical package is provided. The method include: providing a substrate having a first surface and a second surface opposite to the first surface, wherein the second surface has a first level difference; forming an adhesive layer on the second surface of the substrate, wherein the adhesive layer is configured to cover the second surface and provides a third surface spaced apart from the second surface of the substrate, wherein the third surface has a second level difference; disposing a tape on the third surface of the adhesive layer; and performing a removing operation on the first surface of the substrate; wherein the second level difference is smaller than the first level difference.

A high resistivity wafer with a heat dissipation structure includes a high resistivity wafer and a metal structure. The high resistivity wafer includes a heat dissipation region and a device support region. The high resistivity wafer consists of an insulating material. The metal structure is only embedded within the heat dissipation region of the high resistivity wafer. The metal structure surrounds the device support region.

A die includes a metal pad, a passivation layer over the metal pad, and a polymer layer over the passivation layer. A metal pillar is over and electrically coupled to the metal pad. A metal ring is coplanar with the metal pillar. The polymer layer includes a portion coplanar with the metal pillar and the metal ring.