A package structure includes a spiral coil, a redistribution layer (RDL) and a molding material. The molding material fills gaps of the spiral coil. The spiral coil is connected to the RDL. A fan-out package structure includes a spiral coil, an RDL and a die. The spiral coil has a depth-to-width ratio greater than about 2. The RDL is connected to the spiral coil. The die is coupled to the spiral coil through the RDL. A semiconductor packaging method includes: providing a carrier; adhering a spiral coil on the carrier; adhering a die on the carrier; dispensing a molding material on the carrier to fill gaps between the spiral coil and the die; and disposing a redistribution layer (RDL) over the carrier so as to connect the spiral coil with the die.

A method for making shielded integrated circuit (IC) packages includes providing spaced apart IC dies carried by a substrate and covered by a common encapsulating material, and cutting through the common encapsulating material between adjacent IC dies to define spaced apart IC packages carried by the substrate. An electrically conductive layer is positioned over the spaced apart IC packages and fills spaces between adjacent IC packages. The method further includes cutting through the electrically conductive layer between adjacent IC packages and through the substrate to form the shielded IC packages.

A material thickness adjustment device and associated methods are shown. Material thickness adjustment devices and methods shown include eddy current measurement to determine material thickness during a deposition or removal operation. Feedback from the measured thickness may then be applied to adjust one or more processing parameters to meet a desired thickness.

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a first recess extending from the first surface towards the second surface; a second recess extending from a bottom of the first recess towards the second surface, wherein a sidewall and the bottom of the first recess and a second sidewall and a second bottom of the second recess together form an exterior side surface of the semiconductor substrate; a wire layer disposed over the first surface and extending into the first recess and/or the second recess; an insulating layer positioned between the wire layer and the semiconductor substrate; and a metal light shielding layer disposed over the first surface and having at least one hole, wherein a shape of the at least one hole is a quadrangle.

A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of the substrate and portions of surfaces of the plurality of first conductive layers. Further, the semiconductor structure includes a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure. Further, the semiconductor structure also includes a plurality of second conductive layers formed on a top surface of the composite magnetic structure, top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.

A package structure includes a spiral coil, a redistribution layer (RDL) and a molding material. The molding material fills gaps of the spiral coil. The spiral coil is connected to the RDL. A fan-out package structure includes a spiral coil, an RDL and a die. The spiral coil has a depth-to-width ratio greater than about 2. The RDL is connected to the spiral coil. The die is coupled to the spiral coil through the RDL. A semiconductor packaging method includes: providing a carrier; adhering a spiral coil on the carrier; adhering a die on the carrier; dispensing a molding material on the carrier to fill gaps between the spiral coil and the die; and disposing a redistribution layer (RDL) over the carrier so as to connect the spiral coil with the die.

Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

A packaged semiconductor module comprises a substrate having a ground plane, an electronic device mounted on a surface of the substrate, a bond pad disposed on the surface of the substrate and electrically connected to the ground plane, a mold compound covering the electronic device, a conductive post disposed on a side of the electronic device, the conductive post extending from the bond pad and at least partially through the mold compound, and a conductive layer disposed on the mold compound and electrically coupled to the conductive post and to the ground plane, the conductive post, the conductive layer, and the ground plane together forming the integrated electromagnetic interference shield, the conductive post extending from the bond pad to the conductive layer in a direction perpendicular to a plane defined by the surface of the substrate.