A semiconductor device and a method for making the same are provided. The semiconductor device includes: a substrate including a substrate top surface and a substrate bottom surface; an electronic component mounted on the substrate top surface; a bottom encapsulant disposed on the substrate top surface and encapsulating the electronic component; a top encapsulant disposed on the bottom encapsulant; an internal shielding layer disposed between the bottom encapsulant and the top encapsulant, wherein a projection of the internal shielding layer onto the substrate top surface overlaps with the electronic component, the internal shielding layer has an internal shielding layer lateral surface, and a portion of the internal shielding layer lateral surface is exposed from the bottom encapsulant and the top encapsulant; and an external shielding layer covering the bottom encapsulant and the top encapsulant and contacting with the exposed portion of the internal shielding layer lateral surface.

A system for semiconductor wafer testing, a tangent probe card and a probe head assembly thereof. The system has a tangent probe card and a tester. Testing ends of the probe card are flat, hence the allowable alignment budget will always be more generous for the tangent probe card. The probes are held on the probe head assembly, and once the alignment is achieved accurately during manufacture, the alignment will remain stable throughout the whole life cycle. The probe has a greater CCC due to its larger cross section. The throughput of the tangent probes is higher than that of the conventional probe card since there is no need to move the pointed pin/structure. No pointed pin/structure needs to be repaired, and the flat bottom surface of the probe head assembly is easier to clean and maintain.

A flexible device includes: (1) a flexible substrate; and (2) an interconnect disposed over the flexible substrate, wherein the interconnect has a varying vertical displacement along its length, relative to a top surface of the flexible substrate.

Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

A highly reliable electronic device that efficiently dissipates generated heat and a method for manufacturing the electronic device are provided. The electronic device includes mount board, heat generating component mounted on mount board, pressing component provided above heat generating component, and film provided between heat generating component and pressing component. Further, liquid heat conductive material is provided between heat generating component and film and between pressing component and graphite-based carbonaceous film. Film contains graphite-based carbon and is compressed to predetermined compressibility by pressing component.

Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 m to 10 m. A high-frequency device is also provided.

A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.

Semiconductor structure and its fabrication method are provided. The method includes providing a substrate, where the substrate includes a first region having a first metal structure and a second region having a second metal structure; forming a device layer on each of top surfaces of the substrate, the first metal structure and the second metal structure; forming a first through hole in the device layer at the first region, where the first through hole exposes at least a portion of surfaces of the first metal structure, and forming a second through hole in the device layer at the second region, where the second through hole passes through the first device and exposes at least a portion of surfaces of the second metal structure; and using a selective metal growth process, forming a first plug in the first through hole and forming a second plug in the second through hole.

A semiconductor package includes a redistribution substrate having a first redistribution layer, a semiconductor chip on the redistribution substrate and connected to the first redistribution layer, a vertical connection conductor on the redistribution substrate and electrically connected to the semiconductor chip through the first redistribution layer, a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor, and an encapsulant covering at least a portion of each of the semiconductor chip, the vertical connection conductor, and the core member, the encapsulant filling the first and second through-holes, wherein the vertical connection conductor has a cross-sectional shape with a side surface tapered to have a width of a lower surface thereof is narrower than a width of an upper surface thereof, and the first and second through-holes have a cross-sectional shape tapered in a direction opposite to the vertical connection conductor.