A manufacturing apparatus of a semiconductor device includes a stage, a bonding head, a copying mechanism mounted on the bonding head, and a controller executing adjustment processing. In the adjustment processing, the controller causes a facing surface of the bonding head to abut against a reference surface of the stage after setting the copying mechanism to a locked state, then presses the facing surface against the reference surface after switching the copying mechanism to a free state, and after that, switches the copying mechanism to the locked state.

The present invention relates to a system and a method for confirming the mounted state of picker mounts. Barcodes are formed on corresponding picker mounts while including information for identifying each type of picker mount. A barcode reader is arranged on one side of a variable picker module so as to sequentially read each barcode of the picker mounts moving in the arrangement direction of pickers while mounted on the pickers. A system controller identifies each position and type of the corresponding picker mounts on the basis of information provided from the barcode reader, and then, compares same with confirmation criteria so as to confirm incorrect mounting and non-mounting of the picker mounts.

The present invention relates to a system and a method for confirming the mounted state of picker mounts. Barcodes are formed on corresponding picker mounts while including information for identifying each type of picker mount. A barcode reader is arranged on one side of a variable picker module so as to sequentially read each barcode of the picker mounts moving in the arrangement direction of pickers while mounted on the pickers. A system controller identifies each position and type of the corresponding picker mounts on the basis of information provided from the barcode reader, and then, compares same with confirmation criteria so as to confirm incorrect mounting and non-mounting of the picker mounts.

A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.

A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.

To provide an adhesive suitable to bond a component of an electronic apparatus or an optical apparatus, as well as an electronic apparatus and an optical apparatus in which the adhesive is used. An adhesive according to an embodiment of the present technology includes a flexible adhesive material and a plurality of particles. The adhesive material is flexible. The plurality of particles is dispersed in the adhesive material, the plurality of particles being deformed under a low-rate load and not being deformed under a high-rate load.

An implantable device and method of manufacture include a substantially hermetic polychlorotrifluoroethylene (PCTFE) enclosure with closely-spaced wires extending out of the enclosure. The implantable device includes a PCTFE first portion of an enclosure and a PCTFE second portion of the enclosure. The first and second portions are configured to mate with each other to form the enclosure. A plurality of insulated wires extend between the first and second portions of the enclosure. Each of the insulated wires are parallel to each other and separated by less than 150 micrometers (μm) from a neighboring wire. A thermal weld seam of PCTFE is disposed between the first portion of the enclosure and the second portion of the enclosure and conformally adheres around insulation of each wire such that the enclosure is sealed.

An implantable device and method of manufacture include a substantially hermetic polychlorotrifluoroethylene (PCTFE) enclosure with closely-spaced wires extending out of the enclosure. The implantable device includes a PCTFE first portion of an enclosure and a PCTFE second portion of the enclosure. The first and second portions are configured to mate with each other to form the enclosure. A plurality of insulated wires extend between the first and second portions of the enclosure. Each of the insulated wires are parallel to each other and separated by less than 150 micrometers (μm) from a neighboring wire. A thermal weld seam of PCTFE is disposed between the first portion of the enclosure and the second portion of the enclosure and conformally adheres around insulation of each wire such that the enclosure is sealed.

A semiconductor device includes a conductive substrate, a conductive first joint portion arranged on the substrate, a SiC diode chip arranged on the first joint portion, a conductive second joint portion arranged on the SiC diode chip, and a transistor chip arranged on the second joint portion. The SiC diode chip includes a cathode pad arranged on one end and an anode pad arranged on the other end in the thickness direction. The cathode pad is joined to the substrate by the first joint portion. The transistor chip includes a drain electrode arranged on one end in the thickness direction. The anode pad is joined with the drain electrode by the second joint portion. The anode pad is arranged in a region enclosed by an outer edge of the SiC diode chip as viewed in a thickness direction of the substrate. The anode pad has an area larger than that of the transistor chip as viewed in the thickness direction of the substrate.

The present description concerns an electronic device comprising: an electronic chip comprising an active area on a first surface, and a second surface opposite to the first surface; a substrate, the first surface of said chip being mounted on a third surface of said substrate; and a thermally-conductive cover comprising a transverse portion extending at least above the second surface of said electronic chip, wherein the electronic device further comprises at least one thermally-conductive pillar coupling the second surface of the electronic chip to said transverse portion of said thermally-conductive cover.