A substrate processing system for treating a substrate includes a manifold and a plurality of injector assemblies located in a processing chamber. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of injector assemblies and adjust a pulse width supplied to the valve in each of the plurality of injector assemblies based on at least one of manufacturing differences between the valves in each of the plurality of injector assemblies and non-uniformities of the valves in each of the plurality of injector assemblies to cause a desired dose to be supplied from the valve in each of the plurality of injector assemblies.

A method for process a chemical liquid is provided. The method includes at least providing a system having at least one filtration medium, treatment the system with a treatment liquid having a content of iron (Fe) and calcium (Ca) of about 10 ppb or less, and processing a chemical liquid using an apparatus having the system configured therein after the treatment process.

An apparatus for processing stacks is provided. A first gas source is provided. A first gas manifold is connected to the first gas source. A first processing station has a first gas outlet, wherein the first gas outlet is connected to the first gas manifold. A first variable conductance valve is between the first gas source and the first gas outlet along the first gas manifold.

In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.

A stripping-solution machine and working method thereof are provided. The stripping-solution machine includes: a plurality stages of chambers, which are arranged sequentially in order, wherein each stage of the chamber is correspondingly connected to a storage box; at least one filter device, wherein one end of the filter device is disposed to be connected to a storage box corresponding to a current stage chamber by a first pipe, and another end of the filter device is connected to a next stage chamber by a second pipe. Furthermore, a plurality of valve switches are at least disposed on the first pipe or the second pipe.

Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

A substrate processing apparatus includes: a chamber; and a processing gas supply unit connected to the chamber via a processing gas supply flow path and configured to supply a processing gas. The processing gas supply unit includes a raw material cartridge that includes a raw material tank that accommodates a porous member containing a metal-organic framework adsorbed with gas molecules of a raw material of the processing gas; a main body configured to communicate the raw material tank and the processing gas supply flow path with each other when the raw material cartridge is attached; and a desorption mechanism configured to desorb the gas molecules of the raw material of the processing gas and allow the gas molecules to flow out as the processing gas to the processing gas supply flow path while the raw material cartridge is attached to the main body.

Provided is an apparatus for processing a substrate, which includes a chamber having a processing space in which a process of depositing a thin-film on a substrate is performed and a structure which is installed to expose at least one surface to the processing space and in which a coating layer made of a polymer forming at least one of covalent bond and double bond at an end tail is formed on the surface exposed to the processing space.

Thus, the substrate processing apparatus in accordance with an exemplary embodiment may restrict or prevent particle generation and substrate pollution generation caused by a thin-film deposited in the chamber. Also, a period of cleaning the chamber and a structure or a component in the chamber may be extended. Thus, a product yield rate and an apparatus operation efficiency may improve.

The dilute chemical solution supply device 1 comprises: a dilute chemical solution preparation unit 2 that prepares a dilute chemical solution W1; a reservoir 3 for the prepared dilute chemical solution; a dilute chemical solution adjustment/supply mechanism 4 that supplies, as washing water W2, the dilute chemical solution W1 stored in the reservoir 3 to a plurality of single-wafer type washers 5A, 5B, and 5C; and a return mechanism that is connected to each of the single-wafer type washers 5A, 5B, and 5C and refluxes excess water from the single-wafer type washers to the reservoir 3. According to such a dilute chemical solution supply device, it is possible to accurately adjust the concentration of the solute of the dilute chemical solution and suppress the discharge of excess water, and the dilute chemical solution supply device is thus suitable for washing of wafers, etc.

The present disclosure relates to an apparatus for trapping a reaction by-product created by an etching process, the apparatus being configured to trap a reaction by-product contained in an unreacted gas discharged after a process is performed in an etching process chamber during a semiconductor manufacturing process, trap and stack the reaction by-product in the form of powder at a position between a vacuum pump and a scrubber through multiple flow path switching structures, multiple trapping structures, and multiple stacking structures, and discharge only a gaseous unreacted gas to the scrubber.