The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a drying fluid to the inner space; and a fluid exhaust unit configured to exhaust the drying fluid from the inner space, and wherein the fluid exhaust unit includes an exhaust line connected to the chamber; a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space at a set pressure; and a heating member installed at the pressure adjusting member or a back end of the pressure adjusting member.

There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor wafer processing device comprising a chamber, and, a showerhead configured to supply a gas into the chamber, wherein the showerhead includes, a plate, a plurality of first spray hole groups in a first row from a center of the plate, and a second spray hole group in a second row outside the first row, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is an average value of distances from the center of the plate to each spray hole of each of the first spray hole groups, the number of first spray holes where a distance from the center of the plate is smaller than L is more than the number of first spray holes where the distance from the center of the plate is greater than L.

The inventive concept provides a liquid treating apparatus. The liquid treating apparatus includes a spin chuck configured to support and rotate a substrate; and a liquid supply unit configured to supply a liquid to the substrate, and wherein the liquid supply unit includes: a first nozzle connected to a first flow path pipe and configured to discharge a first liquid to the substrate; a first valve assembly including a first cut-off valve for cutting-off a flow of the first liquid within the first flow path pipe and a first suck-back valve for sucking-back the first liquid, and installed at the first flow pipe; a second nozzle connected to a second flow path pipe and configured to discharge a second liquid to the substrate; a second valve assembly including a second cut-off valve for cutting-off a flow of the second liquid within the second flow path pipe and a second suck-back valve for sucking-back the second liquid, and installed at the second flow pipe path; a first flow velocity controller configured to adjust an air flow velocity of an air introduced into or outflowed from the first suck-back valve; and a second flow velocity controller configured to adjust an air flow velocity of an air introduced into or outflowed from the second suck-back valve, and wherein a first speed of a suck-back speed provided by the first valve assembly is slower than a second suck-back speed provided by the second valve assembly, and a surface tension of the first liquid is lower than a surface tension of the second liquid.

A control method of a film forming apparatus includes (a) acquiring a first temperature measured by a first temperature sensor in a tubular member in a processing container of the film forming apparatus; (b) calculating a first power to be output to a heating unit disposed in the processing container; (c) acquiring a second temperature measured by a second temperature sensor provided outside the tubular member in the processing container; (d) calculating a second power to be output to the heating unit; (e) calculating a predicted value of the second temperature at a predetermined time ahead, from the second temperature based on a prediction model; (f) outputting either the first power or the second power to the heating unit according to the predicted value of the second temperature; and (g) repeating (a) to (f) in a predetermined cycle.

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a first process chamber having a first treatment space therein; a second process chamber having a second treatment space therein; and an exhaust unit exhausting atmospheres of the first treatment space and the second treatment space, in which the exhaust unit includes: an integrated exhaust line; a first exhaust line connecting the first process chamber and the integrated exhaust line; a second exhaust line connecting the second process chamber and the integrated exhaust line; and a partition wall partitioning a partial section of a flow path within the integrated exhaust line into a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid discharged through the second exhaust line flows.

A semiconductor manufacturing apparatus includes: a gas introduction pipe connected to a processing container of the semiconductor manufacturing apparatus in order to introduce a gas into the processing container; and a temperature sensor provided in the gas introduction pipe in order to measure a temperature of a gas in the gas introduction pipe.

A method for processing a substrate includes performing a cyclic plasma process including a plurality of cycles, each cycle of the plurality of cycles including purging a plasma processing chamber including the substrate with a first deposition gas including carbon. The substrate includes a first layer including silicon and a second layer including a metal oxide. The method further includes exposing the substrate to a first plasma generated from the first deposition gas to selectively deposit a first polymeric film over the first layer relative to the second layer; purging the plasma processing chamber with an etch gas including fluorine; and exposing the substrate to a second plasma generated from the etch gas to etch the second layer.

A processing liquid supply system includes: a processing liquid supply apparatus including a first carrier accommodation section that accommodates a carrier, a first bottle accommodation section that accommodates a processing liquid bottle taken out from the carrier, a liquid feeding section that feeds a processing liquid to a substrate processing apparatus from the processing liquid bottle, and a first transfer arm; and a control device configured to control the first transfer arm to take a processing liquid bottle out from the carrier and transfer the processing liquid bottle to the first bottle accommodation section, to transfer the processing liquid bottle from the first bottle accommodation section to the liquid feeding section, and to transfer the consumed processing liquid bottle from the liquid feeding arm and accommodate the consumed processing liquid bottle in the carrier.

There is provided a configuration that includes: an intake damper and an intake fan configured to communicate with an intake port that sucks air to a transfer chamber connected to a process chamber; a valve of an inert gas introduction pipe configured to supply an inert gas to the transfer chamber; an exhaust fan and a first exhaust valve installed in the transfer chamber; a switch configured to select one of an atmospheric mode in which an atmosphere of the transfer chamber is an air atmosphere and a purge mode in which the atmosphere of the transfer chamber is an inert gas atmosphere; and a controller configured to control each of the intake damper, the intake fan, the valve of the inert gas introduction pipe, the exhaust fan, and the first exhaust valve to execute one of the atmospheric mode and the purge mode.

Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.