A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

A trap is provided for a vacuum line to be mounted on a pipe connected to a reactor, the trap including: a chamber including an inlet and a bottom wall; an outlet tube in communication with the chamber and including another inlet, the inlet and the outlet tube are configured to be connected to the pipe and to permit passage of a flow of gas to be pumped coming from the reactor; and a deflector between the inlet and the another inlet, the bottom wall being below the another inlet and being an annular cup or an adjustable height cup, and conformed so as to cooperate with the deflector to permit an accumulation of solid elements in the bottom wall when the flow of gas is reduced and to expel the solid elements from the chamber by aerodynamic entrainment when the flow of gas is increased.

In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.

The present invention discloses a semiconductor device and an oxygen removal method thereof. The semiconductor device comprises: a process cavity, an oxygen removal pipe and an oxygen detection device, wherein the oxygen detection device comprises an oxygen detection pipe, a switching ball valve and an oxygen sensor; the oxygen detection pipe comprises a first pipe, a second pipe and a third pipe which are arranged in parallel and all connected to the oxygen removal pipe and the switching ball valve; the oxygen sensor is arranged on the third pipe; and, the switching ball valve is constructed in such a way that the switching ball valve communicates the first pipe with the second pipe in an oxygen removal stage and communicates the first pipe with the third pipe in an oxygen detection stage.

A filter device includes one or more filter membranes, and a filter housing enclosing the one or more filter membranes. Each of the filter membranes includes a base membrane and a plurality of through holes.

The present invention discloses an exhausting device and an exhausting method in substrate processing equipment, and more particularly, a technique for controlling a processing process environment by providing a buffer space for storing chemical fumes outside a ventilation unit of the substrate processing equipment, and discharging the chemical fumes into the buffer space in accordance with a processing process in a chamber interior space.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

A semiconductor fabrication facility is provided. The semiconductor fabrication facility includes a processing tool and a transmission assembly. The transmission assembly is connected to the processing tool and comprises a number of transmission lines used to supply electric power or a fluid to the processing tool or remove the fluid or an exhaust gas from the processing tool. The transmission lines includes a first transmission line and a second transmission line. The first transmission line has a first temperature and the second transmission line has a second temperature. The second temperature is higher than the first temperature. The first transmission line and the second transmission line are arranged such that a thermal energy of the second transmission line is able to be transmitted to the first transmission line to change the first temperature of the first transmission line.

A wafer inspection apparatus according to one embodiment is a wafer inspection apparatus including a plurality of inspection parts arranged in a height direction and a lateral direction, and includes a pair of air circulating means disposed at both ends in a longitudinal direction of an air circulating region including the plurality of inspection parts arranged in the lateral direction and configured to circulate air in the circulating region.

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.